2N7002K

SOT-23Plastic-EncapsulateMOSFETs

N-channelMOSFET FEATURE ●HighdensitycelldesignforLowRDS（on） ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability ●ESDprotected APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

2N7002K

SOT-23Plastic-EncapsulateMOSFETS

FEATURE ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability ●HMBESDprotected(2000V) APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

2N7002K

N-ChannelEnhancementMOSFET

Features LowOn-Resistance:RDS(ON) LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected2KVHBM

2N7002K

TrenchMOS™logiclevelFET

1.1Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS™technology. 1.2Features 1.3Applications 1.4Quickreferencedata nLogiclevelcompatiblenVeryfastswitching nSubminiaturesurfacemountpackagenGate-sourceESDprotectiondiodes

2N7002K

60VN-ChannelMosfet

Application Directlogic-levelinterface:TTL/CMOS Drivers:relays,solenoids,lamps,hammersdisplay, memories,transistors,etc. Batteryoperatedsystems Solid-staterelays

2N7002K

Plastic-EncapsulateMOSFET

Features HighdensitycelldesignforlowRDS(ON). Voltagecontrolledsmallsignalswitch. Ruggedandreliable. Highsaturationcurrentcapability. ESDprotected LoadSwitchforPortableDevices. DC/DCConverter.

2N7002K

N-Channel60-V(D-S)MOSFET

GeneralFEATURE ●HighdensitycelldesignforLowRDS(on) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability ●ESDprotected2KVHBM APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

2N7002K

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures VDS=60V,ID=0.3A RDS(ON)

2N7002K

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures VDS=60V,ID=0.3A RDS(ON)

2N7002K

N-Channel60V(D-S)MOSFET

•Lowon-resistance:2Ω •Lowthreshold:2V(typ.) •Lowinputcapacitance:25pF •Fastswitchingspeed:25ns •Lowinputandoutputleakage •TrenchFET®powerMOSFET •2000VESDprotection