60V Dual N-Channel Enhancement Mode MOSFET

Features © Fast switching | ® Green Device Available ® Suit for 1.5V Gate Drive Applications

文件：979.62 Kbytes 页数：3 Pages

TECHPUBLIC

台舟电子

We declare that the material of product compliance with RoHS requirements and Halogen Free.

FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● ESD Protected:1000V

文件：1.33572 Mbytes 页数：6 Pages

LEIDITECH

雷卯电子

60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology •

文件：283.37 Kbytes 页数：15 Pages

NEXPERIA

安世

N-Channel 60-V (D-S) MOSFET

DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the

文件：233.86 Kbytes 页数：3 Pages

VISHAYVishay Siliconix

威世威世科技公司