2N7002K

Plastic-EncapsulateMosfets

N-ChannelMOSFET FEATURES HighdensitycelldesignforlowRDS(ON) Voltagecontrolledsmallsignalswitch. Ruggedandreliable. Highsaturationcurrentcapability.

2N7002K

N-ChannelEnhancementModeFieldEffectTransistor

ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)

2N7002K

N-CHannelEnhancementModeMOSFET

HighSpeedSwitchingApplication Features •ESDrating:1000V(HBM) •LowOn-Resistance:RDS(on)

2N7002K

N-ChannelEnhancementMOSFET

Features ●LowOn-Resistance:RDS(ON) ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage ●ESDProtected2KVHBM

2N7002K

SmallSignalMOSFET

2N7002K

N-ChannelEnhancementModeMOSFET

Features ●60V/0.5A,RDS(ON)=2.5Ω@VGS=10V RDS(ON)=2.5Ω@VGS=4.5V ●SOT-23forSurfaceMountPackage. Applications ●DirectLogic-levelInterface:TTL/CMOS. ●Drivers:Relays,Lamps,Display,Transistor,etc ●BatteryOperatedSystems.

2N7002K

N-Channel60-V(D-S)MOSFET

2N7002K

Voltagecontrolledsmallsignalswitch

MOSFET(N-Channel) FEATURES ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability

2N7002K

N-ChannelMOSFET

2N7002K

SOT-23Plastic-EncapsulateMOSFET

N-ChannelMOSFET Features ●HighdensitycelldesignforLowRDS（on） ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability ●ESDprotected Applications ●LoadSwitchforPortableDevices ●DC/DCConverter