2N7002K

Voltagecontrolledsmallsignalswitch

MOSFET(N-Channel) FEATURES ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability

2N7002K

N-ChannelMOSFET

2N7002K

SOT-23Plastic-EncapsulateMOSFET

N-ChannelMOSFET Features ●HighdensitycelldesignforLowRDS（on） ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability ●ESDprotected Applications ●LoadSwitchforPortableDevices ●DC/DCConverter

2N7002K

N-ChannelEnhancementModePowerMOSFET

2N7002K

300mA,60VN-CHANNELENHANCEMENTMODEMOSFET

2N7002K

NChannelEnhancementModeMOSFET

FEATURE ●60V/0.50A,RDS(ON)=2Ω@VGS=10V ●60V/0.20A,RDS(ON)=4Ω@VGS=4.5V ●SuperhighdensitycelldesignforextremelylowRDS(ON) ●Exceptionalon-resistanceandMaximumDCcurrentcapability ●ESDcapability:2000V ●SOT-23packagedesign

2N7002K

N-channelMOSFET

2N7002K

N-ChannelSMDMOSFETESDProtection

2N7002K

60VESDProtectedN-ChannelEnhancementModeMOSFET

RDS(ON),VGS@10V,IDS@500mA=2Ω RDS(ON),VGS@4.5V,IDS@200mA=3Ω FEATURES •AdvancedTrenchProcessTechnology •UltraLowOnResistance:2Ω •FastSwitchingSpeed:20ns •LowInputandOutputLeakageCurrent •2KVESDProtection •SpeciallyDesignedforHighSpeedCircuit,BatteryOpe

2N7002K

N-ChannelAdvancedPowerMOSFET

Features •60V/0.2A, RDS(ON)=2500mΩ(Typ.)@VGS=10V RDS(ON)=2500mΩ(Typ.)@VGS=5V •ESDprotectedupto2KV •LowOn-Resistance •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeandGreenDevicesAvailable(RoHSCompliant) Applications •PowerManagementinDesktopC