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型号	下载订购	功能描述	制造商上传企业	LOGO
2N7000	文件：372.34 Kbytes Page：13 Pages	丝印：2N7000；Package：TO-92；N-Channel Enhancement Mode Field Effect Transistor Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products 文件：372.34 Kbytes 页数：13 Pages	ONSEMI 安森美半导体	ONSEMI
2N7000-D26Z	文件：372.34 Kbytes Page：13 Pages	丝印：2N7000；Package：TO-92；N-Channel Enhancement Mode Field Effect Transistor Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products 文件：372.34 Kbytes 页数：13 Pages	ONSEMI 安森美半导体	ONSEMI
2N7000-D74Z	文件：372.34 Kbytes Page：13 Pages	丝印：2N7000；Package：TO-92；N-Channel Enhancement Mode Field Effect Transistor Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products 文件：372.34 Kbytes 页数：13 Pages	ONSEMI 安森美半导体	ONSEMI
2N7000-D75Z	文件：372.34 Kbytes Page：13 Pages	丝印：2N7000；Package：TO-92；N-Channel Enhancement Mode Field Effect Transistor Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products 文件：372.34 Kbytes 页数：13 Pages	ONSEMI 安森美半导体	ONSEMI
2N7000	文件：150.26 Kbytes Page：2 Pages	丝印：2N7000021；Package：TO-92；N-Channel Enhancement Mode Power MOSFET FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATIONS ● Load switch for portable devices ● DC/DC converter 文件：150.26 Kbytes 页数：2 Pages	SECELECTRONICS 上优电子	SECELECTRONICS
2N7000	文件：372.34 Kbytes Page：13 Pages	丝印：2N7000；Package：TO-92；N-Channel Enhancement Mode Field Effect Transistor Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products 文件：372.34 Kbytes 页数：13 Pages	ONSEMI 安森美半导体	ONSEMI
2N7000-D26Z	文件：372.34 Kbytes Page：13 Pages	丝印：2N7000；Package：TO-92；N-Channel Enhancement Mode Field Effect Transistor Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products 文件：372.34 Kbytes 页数：13 Pages	ONSEMI 安森美半导体	ONSEMI
2N7000-D74Z	文件：372.34 Kbytes Page：13 Pages	丝印：2N7000；Package：TO-92；N-Channel Enhancement Mode Field Effect Transistor Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products 文件：372.34 Kbytes 页数：13 Pages	ONSEMI 安森美半导体	ONSEMI
2N7000-D75Z	文件：372.34 Kbytes Page：13 Pages	丝印：2N7000；Package：TO-92；N-Channel Enhancement Mode Field Effect Transistor Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products 文件：372.34 Kbytes 页数：13 Pages	ONSEMI 安森美半导体	ONSEMI
2N7000	文件：150.26 Kbytes Page：2 Pages	丝印：2N7000021；Package：TO-92；N-Channel Enhancement Mode Power MOSFET FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATIONS ● Load switch for portable devices ● DC/DC converter 文件：150.26 Kbytes 页数：2 Pages	SECELECTRONICS 上优电子	SECELECTRONICS

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	2N7000-D26Z	onsemi(安森美)	24+	TO-92-3	9203	支持大陆交货,美金交易。原装现货库存。	询价
深圳市盈慧通电子有限公司	2N7000-D26Z	ON(安森美)	2511		8484	电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价	询价
深圳市达恩科技有限公司	2N7000-D26Z	ONSemiconductor	24+	NA	3000	进口原装正品优势供应	询价
深圳市纳立科技有限公司	2N7000-D26Z		三年内		1983	只做原装正品	询价
深圳市欧亚佳电子有限公司	2N7000-D26Z	ON	20+	SMD	11520	特价全新原装公司现货	询价
深圳市艾宇欣科技有限公司	2N7000-D26Z	ON Semiconductor	2010+	N/A	12799	加我qq或微信，了解更多详细信息,体验一站式购物	询价
艾睿（深圳）半导体有限公司	2N7000-D26Z	ON(安森美)	2447	TO-92-3L	105000	2000个/圆盘一级代理专营品牌!原装正品,优势现货,	询价
深圳市凯睿晟科技有限公司	2N7000-D26Z	ON/安森美	21+	SMD	30000	百域芯优势实单必成可开13点增值税	询价
深圳市科雨电子有限公司	2N7000-D26Z	ON	1809+	TO-92-3	3675	就找我吧!--邀您体验愉快问购元件!	询价
深圳市冠亿通科技有限公司	2N7000-D26Z	ON/安森美	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价

更多2N7000供应商更新时间2025-9-19 11:42:00

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