P-CHANNEL POWER MOSFET

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SEME-LAB

MOSFETs and JFETs

TT Electronics

POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET ®TRANSISTORS THRU-HOLE - TO-205AF (TO-39) The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low

文件：133.06 Kbytes 页数：7 Pages

IRF

POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET ®TRANSISTORS THRU-HOLE - TO-205AF (TO-39) The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low

文件：133.06 Kbytes 页数：7 Pages

IRF

POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET ®TRANSISTORS THRU-HOLE - TO-205AF (TO-39) The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low

文件：133.06 Kbytes 页数：7 Pages

IRF