HiRel MOSFETs

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Infineon

英飞凌

P-Channel MOSFET in a Hermetically sealed TO39 Metal Package

文件：15.53 Kbytes 页数：1 Pages

SEME-LAB

HEXFET TRANSISTORS THRU-HOLE (TO-205AF)

200V, P-CHANNEL The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance. The HEXFET

文件：135.28 Kbytes 页数：7 Pages

IRF

HEXFET TRANSISTORS THRU-HOLE (TO-205AF)

200V, P-CHANNEL The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance. The HEXFET

文件：135.28 Kbytes 页数：7 Pages

IRF

POWER MOSFET P-CHANNEL(BVdss=-200V, Rds(on)=0.80ohm, Id=-4.0A)

200V, P-CHANNEL The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance. The HEXFET

文件：282.47 Kbytes 页数：6 Pages

IRF