POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET ®TRANSISTORS THRU-HOLE - TO-205AF (TO-39) The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low

文件：133.06 Kbytes 页数：7 Pages

IRF

高可靠性功率 MOSFET

\n优势:;

Infineon

英飞凌

POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET ®TRANSISTORS THRU-HOLE - TO-205AF (TO-39) The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low

文件：133.06 Kbytes 页数：7 Pages

IRF

Repetitive Avalanche Ratings

文件：238.65 Kbytes 页数：7 Pages

IRF

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. Desinged to be a close replacement for the TO-39 package, the LCC will give designers the extra flexibility the

文件：203 Kbytes 页数：7 Pages

IRF