3.5A, 200V, 0.800 Ohm, N-Channel Power

3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET The 2N6790 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transis

文件：86.16 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

N-CHANNEL MOSFET

DESCRIPTION This 2N6790U device is military qualified up to a JANTXV level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. FEATURES • JEDEC registered 2N6790U. • JAN, JANTX, and JANTXV qualificat

文件：688.67 Kbytes 页数：7 Pages

MICROSEMI

美高森美

N-CHANNEL ENHANCEMENT MOSFET

Description: N-Channel Enhancement MOSFET

文件：112.56 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-CHANNEL POWER MOSFET

FEATURES • AVALANCHE ENERGY RATED • HERMETICALLY SEALED • DYNAMIC dv/dt RATING • SIMPLE DRIVE REQUIREMENTS

文件：23.29 Kbytes 页数：2 Pages

SEME-LAB

N-CHANNEL POWER MOSFET

FEATURES • AVALANCHE ENERGY RATED • HERMETICALLY SEALED • DYNAMIC dv/dt RATING • SIMPLE DRIVE REQUIREMENTS

文件：238.72 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N?밅HANNEL POWER MOSFET

FEATURES • HERMETICALLY SEALED • DYNAMIC dv/dt RATING • AVALANCHE ENERGY RATING • SIMPLE DRIVE REQUIREMENTS

文件：25.64 Kbytes 页数：2 Pages

SEME-LAB

TMOS FET TRANSISTOR N - CHANNEL

FEATURES • VDSS = 100V • ID = 8A • RDSON = 0.18Ω

文件：18.47 Kbytes 页数：2 Pages

SEME-LAB

N-CHANNEL POWER MOSFET

Features: • Hermetic Low Profile TO-39 (TO-205AF) Metal Package. • Ideally Suited For Switching, Power Supply, Motor Control and Amplifier Applications. • Screening Options Available.

文件：296.15 Kbytes 页数：3 Pages

TTELEC

100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor

[Omnirel] DESCRIPTION This hermetically packaged QPL product features the latest advanced MOSFET technology. It is ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls,

文件：47.64 Kbytes 页数：5 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

8A, 100V, 0.180 Ohm, N-Channel Power MOSFET

8A, 100V, 0.180 Ohm, N-Channel Power MOSFET The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors r

文件：140.76 Kbytes 页数：7 Pages

INTERSIL