2N6491数据手册分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF

描述 Description

The 15 A, 80 V PNP Bipolar Power Transistor is designed for use in general-purpose amplifier and switching applications. 2N6487, 2N6488 (NPN); and 2N6490, 2N6491 (PNP) are complementary devices.

特性 Features

• DC Current Gain Specified to 15 Amperes-- hFE = 20-150 @ IC = 5.0 Adc; hFE= 5.0 (Min) @ IC = 15 Adc
• Collector-Emitter Sustaining Voltage--VCEO(sus) = 60 Vdc (Min) - 2N6487, 2N6490; VCEO(sus)= 80 Vdc (Min) - 2N6488, 2N6491
• High Current Gain--Bandwidth ProductfT = 5.0 MHz (Min) @ IC = 1.0 Adc
• TO-220AB Compact Package
• Pb-Free Packages are Available

应用 Application

• Designed for use in general-purpose amplifier and switching applications.

简介

2N6491属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的2N6491晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。