2N6042数据手册分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF

描述 Description

The 8 A, 100 V NPN Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications. 2N6040, 2N6042 (PNP); and 2N6043, 2N6045 (NPN) are complementary devices.

特性 Features

• High DC Current Gain -hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector-Emitter Sustaining Voltage - @ 100 mAdc -VCEO(sus) = 60 Vdc (Min) - 2N6040, 2N6043VCEO(sus)= 80 Vdc (Min) - 2N6041, 2N6044VCEO(sus)= 100 Vdc (Min) - 2N6042, 2N6045
• Low Collector-Emitter Saturation Voltage -VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc - 2N6040,41, 2N6043,44VCE(sat)= 2.0 Vdc (Max) @ IC = 3.0 Adc - 2N6042, 2N6045
• Monolithic Construction with Built-In Base-Emitter Shunt Resistors
• Pb-Free Packages are Available

简介

2N6042属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的2N6042晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。