首页 >2N5401S-RTK/P>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PNPEpitaxialSiliconTransistor AmplifierTransistor •Collector-EmitterVoltage:VCEO=150V •CollectorDissipation:PC(max)=625mW •Suffix“-C”meansConterCollector(1.Emitter2.Collector3.Base) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
TO-92Plastic-EncapsulateTransistors Features SwitchingandAmplificationinHighVoltage ApplicationssuchasTelephony LowCurrent HighVoltage | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
PNPSiliconEpitaxialPlanarTransistor | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 | SEMTECH_ELEC | ||
TheG2N5401isdesignedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages. | ETLE-Tech Electronics LTD 亚历电子亚历电子有限公司 | ETL | ||
PNPEPITAXIALPLANARTRANSISTOR | GTMGTM CORPORATION 勤益投资控股勤益投资控股股份有限公司 | GTM | ||
PNPEPITAXIALPLANARTRANSISTOR Description TheH2N5401isdesignedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages. Features •ComplementstoNPNTypeH2N5551 •HighCollector-EmitterBreakdownVoltage(VCEO=150V(@IC=1mA)) | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | HSMC | ||
AmplifierTransistorsPNPSilicon | LRCLeshan Radio Company 乐山无线电乐山无线电股份有限公司 | LRC | ||
PNPSiliconEpitaxialPlanarTransistors PNPSiliconEpitaxialPlanarTransistors forgeneralpurpose,highvoltageamplifierapplications. AscomplementarytypestheNPNtransistorsST2N5550andST2N5551arerecommended. Onspecialrequest,thesetransistorscanbemanufacturedindifferentpinconfigurations. | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
PNPSiliconEpitaxialPlanarTransistors | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 | SEMTECH_ELEC |
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