2N3055H

ComplementarySiliconPowerTransistors

15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS,115WATTS Complementarysiliconpowertransistorsaredesignedforgeneral−purposeswitchingandamplifierapplications. Features •DCCurrentGain−hFE=20−70@IC=4Adc •Collector−EmitterSaturationVoltage−VCE(sat

2N3055H

iscSiliconNPNPowerTransistor

DESCRIPTION ·ExcellentSafeOperatingArea ·DCCurrentGain-hFE=20-70@IC=4A ·Collector-EmitterSaturationVoltage-:VCE(sat)=1.1V(Max)@IC=4A APPLICATIONS ·Designedforgeneral-purposeswitchingandamplifierApplications.

2N3055HV

TO-3PowerPackageTransistors(NPN)

TO-3PowerPackageTransistors(NPN)

2N3055HV

NPNPOWERTRANSISTOR

2N3055HV

NPNPOWERTRANSISTOR

SwitchingRegulatorandPowerAmplifierApplications TO-3 MetalCanPackage

2N3055NPN

SILICONPLANARPOWERTRANSISTORS

GeneralPurposeSwitchingandAmplifierApplications 2N3055NPN MJ2955PNP

2N3055SD

PowerTransistors

PowerTransistors

2N3055SN

iscSiliconNPNPowerTransistor

DESCRIPTION ·ExcellentSafeOperatingArea ·DCCurrentGain-hFE=80-150@IC=4A ·Collector-EmitterSaturationVoltage- :VCE(sat)=1.1V(Max)@IC=4A ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforgeneral-purposeswitchingand

JAN2N3055

NPNPOWERSILICONTRANSISTOR

JANTX2N3055

NPNPOWERSILICONTRANSISTOR