Chip Type 2C2904A Geometry 0600 Polarity PNP

Chip type 2C2904A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications.

文件：29.38 Kbytes 页数：1 Pages

SEMICOA

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEX=50nA(Max.), IBL=50nA(Max.) @VCE=30V, VEB=3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. • Low Collector Output Capacitance

文件：51.64 Kbytes 页数：4 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Silicon PNP Transistor

Chip type 2C2904A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications.

文件：198.42 Kbytes 页数：2 Pages

SEMICOA

Silicon PNP Transistor

Chip type 2C2904A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications.

文件：198.42 Kbytes 页数：2 Pages

SEMICOA

Silicon PNP Transistor

Chip type 2C2904A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications.

文件：198.42 Kbytes 页数：2 Pages

SEMICOA

EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEX=50nA(Max.), IBL=50nA(Max.) @VCE=30V, VEB=3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. • Low Collector Output Capacitance

文件：53.82 Kbytes 页数：4 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEX=50nA(Max.), IBL=50nA(Max.) @VCE=30V, VEB=3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. • Low Collector Output Capacitance

文件：53.93 Kbytes 页数：4 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

PNP SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2904, 2N2905 series types are PNP silicon transistors manufactured by the epitaxial planar process, designed for small signal, general purpose and switching applications. MARKING: FULL PART NUMBER

文件：508.31 Kbytes 页数：2 Pages

CENTRAL

PNP SWITCHING SILICON TRANSISTOR

PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/290

文件：57.36 Kbytes 页数：2 Pages

MICROSEMI

美高森美

PNP switching transistors

DESCRIPTION PNP switching transistor in a TO-39 metal package. NPN complements: 2N2219 and 2N2219A. FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • High-speed switching • Driver applications for industrial service.

文件：55.32 Kbytes 页数：8 Pages

PHI

PHI