EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEX=50nA(Max.), IBL=50nA(Max.) @VCE=30V, VEB=3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. • Low Collector Output Capacitance

文件：53.82 Kbytes 页数：4 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEX=50nA(Max.), IBL=50nA(Max.) @VCE=30V, VEB=3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. • Low Collector Output Capacitance

文件：53.93 Kbytes 页数：4 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION.\nSWITCHING APPLICATION.FEATURES\nLow Leakage Current\n: ICEX=50nA(Max.), IBL=50nA(Max.)\n          @VCE=30V, VEB=3V.\nExcellent DC Current Gain Linearity.\nLow Saturation Voltage\n  : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.\nLow Collector Output Capacitance\n  : Cob=4pF(Ma Low Leakage Current\n: ICEX=50nA(Max.), IBL=50nA(Max.)\n          @VCE=30V, VEB=3V.\nExcellent DC Current Gain Linearity.\nLow Saturation Voltage\n  : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.\nLow Collector Output Capacitance\n  : Cob=4pF(Max.) @VCB=5V.;

KEC

开益禧

PNP SWITCHING SILICON TRANSISTOR

PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/290

文件：57.36 Kbytes 页数：2 Pages

MICROSEMI

美高森美

PNP SWITCHING SILICON TRANSISTOR

PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/290

文件：57.36 Kbytes 页数：2 Pages

MICROSEMI

美高森美

Bipolar PNP Device in a Hermetically sealed TO39 Metal Package

文件：11.12 Kbytes 页数：1 Pages

SEME-LAB