HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS

HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS • 15 Watts at 100°C Case Temperature • Typ VCE,,at) of 0.2 V at 200mA • Typ VBE of 0.8 V at 200 mA • Typ fT of 50 MHz at 10 V, 100mA

文件：116.97 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS

HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS • 15 Watts at 100°C Case Temperature • Typ VCE,,at) of 0.2 V at 200mA • Typ VBE of 0.8 V at 200 mA • Typ fT of 50 MHz at 10 V, 100mA

文件：116.97 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS

HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS • 15 Watts at 100°C Case Temperature • Typ VCE,,at) of 0.2 V at 200mA • Typ VBE of 0.8 V at 200 mA • Typ fT of 50 MHz at 10 V, 100mA

文件：116.97 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS

HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS • 15 Watts at 100°C Case Temperature • Typ VCE,,at) of 0.2 V at 200mA • Typ VBE of 0.8 V at 200 mA • Typ fT of 50 MHz at 10 V, 100mA

文件：116.97 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

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CENTRAL