DAP transistors are de-signed for efficient high current switching at high frequencies

The 2N1651, 2N1652, and 2N1653 DAP transistors are de-signed for efficient high current switching at high frequencies. The diffused base gives very low input resistance and high cutoff frequency while still maintaining high breakdown voltage. The low input resistance grive better circuit stabiliza

文件：133.02 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

DAP transistors are de-signed for efficient high current switching at high frequencies

The 2N1651, 2N1652, and 2N1653 DAP transistors are de-signed for efficient high current switching at high frequencies. The diffused base gives very low input resistance and high cutoff frequency while still maintaining high breakdown voltage. The low input resistance grive better circuit stabiliza

文件：133.02 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

DAP transistors are de-signed for efficient high current switching at high frequencies

The 2N1651, 2N1652, and 2N1653 DAP transistors are de-signed for efficient high current switching at high frequencies. The diffused base gives very low input resistance and high cutoff frequency while still maintaining high breakdown voltage. The low input resistance grive better circuit stabiliza

文件：133.02 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N1647 - 2N1650

文件：43.4 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans GP BJT NPN 50V 0.5A 3-Pin TO-39 Box

NJS

Trans GP BJT NPN 50V 0.5A 3-Pin TO-39 Box

NJS

Trans GP BJT NPN 50V 0.5A 3-Pin TO-39 Box

NJS