2ED3147MC12L数据手册Infineon中文资料规格书

特性 Features

• For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs
• 2300 V functional offset voltage capable for selected applications
• Galvanically isolated coreless transformer gate driver
• Up to 6.5 A typical peak output current
• 39 ns propagation delay
• 35 V absolute maximum output supply voltage
• High common-mode transient immunity CMTI > 200 kV/µs
• Active shutdown and short circuit clamping
• 3.3 V and 5 V input supply voltage
• Enable pin
• 14.7 V/ 16 V undervoltage lockout (UVLO) protection with hysteresis

优势:
• 8 mm input-to-output and 3.3 mm channel-to-channel creepage and clearance
• Tight part-to-part propogation delay skew of 8 ns max
• Tight channel-to-channel propogation delay skew of 5ns max
• Dual-channel configuation reduces footprint
• Dead time control
• UL 1577 VISO = 6.84 kV (rms) for 1 s, VISO = 5.7 kV (rms) for 1 min
• IEC 60747-17 (planned) with VIORM = 1767 V (peak, reinforced)