2ED1323S12P

1200 V half-bridge gate driver with integrated bootstrap diode and OCP

Features •UniqueInfineonThin-Film-SiliconOnInsulator(SOI)-technology Floating channeldesignedforbootstrapoperation •Maximumbootstrapvoltage(VBnode)of+1225V •Operatingvoltages(VSnode)upto+1200V •NegativeVStransientvoltageimmunityof100V With repetive700ns

2ED1323S12P

1200 V half-bridge gate driver with Active Miller Clamp and Short Circuit Clamp

Features UniqueInfineonThin-Film-SiliconOnInsulator(SOI)-technology Floating channeldesignedforbootstrapoperation Maximumbootstrapvoltage(VBnode)of+1225V Operatingvoltages(VSnode)upto+1200V NegativeVStransientvoltageimmunityof100V With repetitive700

2ED1323S12PXUMA1

1200 V half-bridge gate driver with Active Miller Clamp and Short Circuit Clamp

Features UniqueInfineonThin-Film-SiliconOnInsulator(SOI)-technology Floating channeldesignedforbootstrapoperation Maximumbootstrapvoltage(VBnode)of+1225V Operatingvoltages(VSnode)upto+1200V NegativeVStransientvoltageimmunityof100V With repetitive700