2ED1323S12P

1200 V half-bridge gate driver with integrated bootstrap diode and OCP

Features •UniqueInfineonThin-Film-SiliconOnInsulator(SOI)-technology Floating channeldesignedforbootstrapoperation •Maximumbootstrapvoltage(VBnode)of+1225V •Operatingvoltages(VSnode)upto+1200V •NegativeVStransientvoltageimmunityof100V With repetive700ns

2ED1323S12P

1200 V half-bridge gate driver with Active Miller Clamp and Short Circuit Clamp

Features UniqueInfineonThin-Film-SiliconOnInsulator(SOI)-technology Floating channeldesignedforbootstrapoperation Maximumbootstrapvoltage(VBnode)of+1225V Operatingvoltages(VSnode)upto+1200V NegativeVStransientvoltageimmunityof100V With repetitive700

2ED1323S12P

栅极驱动 IC; \n优势:\n• 1200 V High current capability (2.3 A/2.3 A) with Integrated bootstrap diode in tiny foot print provides reduced BOM cost, smaller PCB space at lower cost with simpler design\n• Optimized gate driver solution with design flexibility for 1200V IGBT/SiC based PIM, discrete switch\n• 100 V negative VS increased reliability / robustness\n• 50% lower level shift losses leads lower temperature operation and higher reliability\n• Active Miller Clamp supports very stable switching performance for whole power device, specially the low threshold one ; SiC etc.\n• Short Circuit Clamp removes gate voltage rise at short circuit situation\n• Latch-up immune increased reliability\n• Fast and accurate integrated over-current protection, provides space and cost savings compare to a discrete op-amp component solution while protecting the switches\n• Under-voltage lockout provides protection at low supply voltage\n• Wider Creepage and clearance distance in DSO-20 package\n;

2ED1323S12PXUMA1

1200 V half-bridge gate driver with Active Miller Clamp and Short Circuit Clamp

Features UniqueInfineonThin-Film-SiliconOnInsulator(SOI)-technology Floating channeldesignedforbootstrapoperation Maximumbootstrapvoltage(VBnode)of+1225V Operatingvoltages(VSnode)upto+1200V NegativeVStransientvoltageimmunityof100V With repetitive700