1200 V half-bridge gate driver with integrated bootstrap diode and OCP

Features • Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology Floating channel designed for bootstrap operation • Maximum bootstrap voltage (VB node) of + 1225 V • Operating voltages (VS node) upto + 1200 V • Negative VS transient voltage immunity of 100 V With repetive 700 ns

文件：1.28519 Mbytes 页数：35 Pages

Infineon

英飞凌

1200 V half-bridge gate driver with Active Miller Clamp and Short Circuit Clamp

Features  Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology Floating channel designed for bootstrap operation  Maximum bootstrap voltage (VB node) of + 1225 V  Operating voltages (VS node) upto + 1200 V  Negative VS transient voltage immunity of 100 V With repetitive 700

文件：1.10102 Mbytes 页数：34 Pages

Infineon

英飞凌

1200 V half-bridge gate driver with Active Miller Clamp and Short Circuit Clamp

Features  Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology Floating channel designed for bootstrap operation  Maximum bootstrap voltage (VB node) of + 1225 V  Operating voltages (VS node) upto + 1200 V  Negative VS transient voltage immunity of 100 V With repetitive 700

文件：1.10102 Mbytes 页数：34 Pages

Infineon

英飞凌

具有 AMC（有源米勒钳位）、SCC（短路钳位）的 1200 V 高侧/低侧栅极驱动器 IC

\n优势:\n• 1200 V High current capability (2.3 A/2.3 A) with Integrated bootstrap diode in tiny foot print provides reduced BOM cost, smaller PCB space at lower cost with simpler design\n• Optimized gate driver solution with design flexibility for 1200V IGBT/SiC based PIM, discrete switch\n• 100 V neg;

Infineon

英飞凌