2ED1323S12P中文资料英飞凌数据手册PDF规格书

Features

• Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology

Floating

channel designed for bootstrap operation

• Maximum bootstrap voltage (VB node) of + 1225 V

• Operating voltages (VS node) upto + 1200 V

• Negative VS transient voltage immunity of 100 V

With

repetive 700 ns pulses

• 2.3 A / 4.6 A peak output source / sink current capability

• Integrated ultra-fast over-current protection (OCP)

±

5% high accuracy reference threshold

Less

than 1 us over-current sens to output shutdown

• Integrated ultra-fast, low resistance bootstrap diode

• Integrated dead-time and shoot-through prevention logic(2ED1322S12M)

• Enable, Fault, and programmable Fault clear RFE input

• Logic operational up to –8 V on VS Pin

• Independent per channel undervoltage lockout (UVLO)

• 25 V VCC supply voltage (maximum)

• Separate Logic (VSS) and output ground (COM)

• Greater than 5 mm clearance / creepage

• 2 kV HBM ESD capability