2ED1321S12M中文资料栅极驱动 IC数据手册Infineon规格书

特性 Features

优势:
• 1200 V High current capability (2.3 A/4.6 A) with Integrated bootstrap diode in tiny foot print provides reduced BOM cost, smaller PCB space at lower cost with simpler design
• Optimized gate driver solution with design flexibility for 1200 V IGBT/SiC based PIM, discrete switch
• 100 V negative VS increased reliability / robustness
• 50% lower level shift losses leads lower temperature operation and higher reliability
• Latch-up immune increased reliability
• Fast and accurate integrated over-current protection, provides space and cost savings compare to a discrete op-amp component solution while protecting the switches
• Under-voltage lockout provides protection at low supply voltage