2ED1321S12M

1200 V half-bridge gate driver with integrated bootstrap diode and OCP

Features •UniqueInfineonThin-Film-SiliconOnInsulator(SOI)-technology Floating channeldesignedforbootstrapoperation •Maximumbootstrapvoltage(VBnode)of+1225V •Operatingvoltages(VSnode)upto+1200V •NegativeVStransientvoltageimmunityof100V With repetive700ns

2ED1321S12M

1200 V half-bridge gate driver with Active Miller Clamp and Short Circuit Clamp

Features UniqueInfineonThin-Film-SiliconOnInsulator(SOI)-technology Floating channeldesignedforbootstrapoperation Maximumbootstrapvoltage(VBnode)of+1225V Operatingvoltages(VSnode)upto+1200V NegativeVStransientvoltageimmunityof100V With repetitive700

2ED1321S12M

栅极驱动 IC; \n优势:\n• 1200 V High current capability (2.3 A/4.6 A) with Integrated bootstrap diode in tiny foot print provides reduced BOM cost, smaller PCB space at lower cost with simpler design\n• Optimized gate driver solution with design flexibility for 1200 V IGBT/SiC based PIM, discrete switch\n• 100 V negative VS increased reliability / robustness\n• 50% lower level shift losses leads lower temperature operation and higher reliability\n• Latch-up immune increased reliability\n• Fast and accurate integrated over-current protection, provides space and cost savings compare to a discrete op-amp component solution while protecting the switches\n• Under-voltage lockout provides protection at low supply voltage\n;

2ED1321S12MXUMA1

1200 V half-bridge gate driver with integrated bootstrap diode and OCP

Features •UniqueInfineonThin-Film-SiliconOnInsulator(SOI)-technology Floating channeldesignedforbootstrapoperation •Maximumbootstrapvoltage(VBnode)of+1225V •Operatingvoltages(VSnode)upto+1200V •NegativeVStransientvoltageimmunityof100V With repetive700ns