1200 V half-bridge gate driver with integrated bootstrap diode and OCP

Features • Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology Floating channel designed for bootstrap operation • Maximum bootstrap voltage (VB node) of + 1225 V • Operating voltages (VS node) upto + 1200 V • Negative VS transient voltage immunity of 100 V With repetive 700 ns

文件：1.28519 Mbytes 页数：35 Pages

Infineon

英飞凌

1200 V half-bridge gate driver with Active Miller Clamp and Short Circuit Clamp

Features  Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology Floating channel designed for bootstrap operation  Maximum bootstrap voltage (VB node) of + 1225 V  Operating voltages (VS node) upto + 1200 V  Negative VS transient voltage immunity of 100 V With repetitive 700

文件：1.10102 Mbytes 页数：34 Pages

Infineon

英飞凌

1200 V half-bridge gate driver with integrated bootstrap diode and OCP

Features • Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology Floating channel designed for bootstrap operation • Maximum bootstrap voltage (VB node) of + 1225 V • Operating voltages (VS node) upto + 1200 V • Negative VS transient voltage immunity of 100 V With repetive 700 ns

文件：1.28519 Mbytes 页数：35 Pages

Infineon

英飞凌

带有集成自举二极管和 OCP 的 1200 V 高侧/低侧栅极驱动器 IC

\n优势:\n• 1200 V High current capability (2.3 A/4.6 A) with Integrated bootstrap diode in tiny foot print provides reduced BOM cost, smaller PCB space at lower cost with simpler design\n• Optimized gate driver solution with design flexibility for 1200 V IGBT/SiC based PIM, discrete switch\n• 100 V ne;

Infineon

英飞凌