CDSOD323-T12C

Marking：2C；Package：SOD-323；Portable communications, computing and video equipment manufacturers are challenging the semiconductor industry to develop increasingly smaller electronic components.

Features ProtectsonelineoroneI/Oport Bidirectionalconfiguration ESDprotection30kVmax. Lowcapacitance:~3pFtypical

ESD08V32D-C

Marking：2C；Package：SOD-323；Transient Voltage Suppressors for ESD Protection

Feature 255~416WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsoneI/Olineorpowerline(Bidirectional) Lowclampingvoltage Workingvoltages:3.3V~48V Lowleakagecurrent IEC61000-4-2(ESD)±30kV(air),±30kV(contact): 3.3V~18V); IEC61000-4-2(ESD)±15kV(air),±15kV(contact):

ESD08V32DS-C

Marking：2C；Package：SOD-323；Transient Voltage Suppressors for ESD Protection

Feature MoistureSensitivityLevel(MSL-1) AEC-Q101qualified 255~410WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsonebidirectionalI/Olineorpowerline LowClampingVoltage WorkingVoltages:3.3V~48V Lowleakagecurrent IEC61000-4-4(EFT):40A(5/50ηs) IEC61000-4-2(ESD)±30kV

MM3Z11

Marking：2C；Silicon Planar Zener Diodes

FEATURES •Totalpowerdissipation:Max.200mW. •Widezenerreversevoltagerange2.0Vto75V. •Smallplasticpackagesuitableforsurfacemounteddesign. •Toleranceapproximately±5

PMDPB85UPE

Marking：2C；Package：SOT1118；20 V dual P-channel Trench MOSFET

1.1Generaldescription Dualsmall-signalP-channelenhancementmodeField-EffectTransistor(FET)ina leadlessmediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plastic packageusingTrenchMOSFETtechnology. 1.2Featuresandbenefits Lowthresholdvoltage Veryfastswitchi

PUMB3H

Marking：2C；Package：TSSOP6；50 V, 100 mA PNP/PNP Resistor-Equipped double Transistor; R1 = 4.7 kΩ, R2 = open

1.Generaldescription PNP/PNPResistor-EquippeddoubleTransistor(RET)inaverysmallSOT363(SC-88)Surface- MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PUMH7H NPN/PNPcomplement:PUMD6H 2.Featuresandbenefits •100mAoutputcurrentcapability •Built-inresistors •

PUMB3H-Q

Marking：2C；Package：TSSOP6；50 V, 100 mA PNP/PNP Resistor-Equipped double Transistor; R1 = 4.7 kΩ, R2 = open

1.Generaldescription PNP/PNPResistor-EquippeddoubleTransistor(RET)inaverysmallSOT363(SC-88)Surface- MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PUMH7H-Q NPN/PNPcomplement:PUMD6H-Q 2.Featuresandbenefits •100mAoutputcurrentcapability •Built-inresistors

RT9758WSC

Marking：2C；Package：WL-CSP-36B；High Voltage Smart Cap Divider and Direct Charge Charger

GeneralDescription TheRT9758isahighefficiencyandhighchargecurrent chargerforhighvoltageapplication.Theefficiencyisup to98.1whenVOUT=10V,IOUT=2A,switching frequency=500kHz,dualphasewithVBUSinputincap dividermode.TheRT9758maximumchargecurrentis upto

SD08C

Marking：2C；Package：SOD-323；Unidirectional TVS Diodes

Description TheSDxxCSeriesisdesignedforapplicationsrequiringtransientovervoltageprotectioncapability.Theyare intendedforuseinvoltageandESDsensitiveequipmentsuchascomputers,printers,businessmachines, communicationsystems,medicalequipmentandotherapplications.The

TL432QPK

Marking：2C；Package：SOT-89；TL431, TL432 Precision Programmable Reference

1Features •Referencevoltagetoleranceat25°C –0.5(Bgrade) –1(Agrade) –2(Standardgrade) •Adjustableoutputvoltage:Vrefto36V •Operationfrom−40°Cto125°C •Typicaltemperaturedrift(TL43xB) –6mV(Ctemp) –14mV(Itemp,Qtemp) •LowOutputNoise •0.2-ΩTypical