丝印：2B9；Package：SOT23；PNP PRE-BIASED TRANSISTOR IN SOT23

Features - Epitaxial Planar Die Construction - Built-In Biasing Resistors, R1 =R2 - Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - The ADTA143ECAQ is suitable for automotive applications requiring specific change control; this p

文件：585.7 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：2B9；Package：SOT23；PNP PRE-BIASED TRANSISTOR IN SOT23

Features - Epitaxial Planar Die Construction - Built-In Biasing Resistors, R1 =R2 - Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - The ADTA143ECAQ is suitable for automotive applications requiring specific change control; this p

文件：585.7 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：2B9；Package：SOD-123FL；ZENER DIODE

Features Glass passivated chip Built-in strain relief Low inductance High peak reverse power dissipation Low reverse leakage For use in stabilizing and clipping with high power rating RoHS compliant

文件：518.82 Kbytes 页数：3 Pages

DAESAN

丝印：2B9；Package：SSOP5-P-0.95；Point Regulators (Low-Dropout Regulator)

Features • Low stand-by current • Overtemperature/overcurrent protection • Operation voltage range is wide. • Maximum output current is high. • Difference between input voltage and output voltage is low. • Small package. (SOT-23 5pin) • Ceramic capacitors can be used.

文件：395.39 Kbytes 页数：23 Pages

TOSHIBA

东芝

丝印：2B9；Package：SMB；Surface Mount Zener Diodes

文件：257.31 Kbytes 页数：3 Pages

ANOVA

林朋科技

丝印：2B9259B；Package：DSO14-150mil；Dual-channel isolated gate-driver ICs in 150 mil DSO package

Features • 2-channel isolated gate driver for Si and SiC MOSFETs and GaN HEMTs power switches • Fast input-to-output propagation (38 ns) with excellent stability (+9/-5 ns) • Strong output stage: 5 A/9 A source/sink • Fast output clamping for VDDA/B

文件：4.28606 Mbytes 页数：32 Pages

INFINEON

英飞凌

丝印：2B9259B；Dual-channel isolated gate-driver ICs in 150 mil DSO package

Features • 2-channel isolated gate driver for Si and SiC MOSFETs and GaN HEMTs power switches • Fast input-to-output propagation (38 ns) with excellent stability (+9/-5 ns) • Strong output stage: 5 A/9 A source/sink • Fast output clamping for VDDA/B

文件：4.28606 Mbytes 页数：32 Pages

INFINEON

英飞凌

丝印：2B9C；Package：SOT-23(DBV)；INA281, –4-V to 110-V, 1.3-MHz Current-Sense Amplifier

1 Features • Wide common-mode voltage: – Operational voltage: −4 V to +110 V – Survival voltage: −20 V to +120 V • Excellent CMRR: – 120-dB DC CMRR – 65-dB AC CMRR at 50 kHz • Accuracy: – Gain: • Gain error: ±0.5% (maximum) • Gain drift: ±20 ppm/°C (maximum) – Offset: • Offset volt

文件：1.30639 Mbytes 页数：30 Pages

TI

德州仪器

丝印：2B9C；Package：SOT-23(DBV)；INA281, –4-V to 110-V, 1.3-MHz Current-Sense Amplifier

1 Features • Wide common-mode voltage: – Operational voltage: −4 V to +110 V – Survival voltage: −20 V to +120 V • Excellent CMRR: – 120-dB DC CMRR – 65-dB AC CMRR at 50 kHz • Accuracy: – Gain: • Gain error: ±0.5% (maximum) • Gain drift: ±20 ppm/°C (maximum) – Offset: • Offset volt

文件：1.30639 Mbytes 页数：30 Pages

TI

德州仪器

丝印：2B9C；Package：SOT-23(DBV)；INA281, –4-V to 110-V, 1.3-MHz Current-Sense Amplifier

1 Features • Wide common-mode voltage: – Operational voltage: −4 V to +110 V – Survival voltage: −20 V to +120 V • Excellent CMRR: – 120-dB DC CMRR – 65-dB AC CMRR at 50 kHz • Accuracy: – Gain: • Gain error: ±0.5% (maximum) • Gain drift: ±20 ppm/°C (maximum) – Offset: • Offset volt

文件：1.30639 Mbytes 页数：30 Pages

TI

德州仪器