28S

型号：ESDALC6V1P5；Package：SOT-553；Low Capacitance TVS Diode Array

Features «Lowoperatingvoltage:5V/ «Ultralowcapacitance:0.3pFtypical(I/Oto0) Ultralowleakage:nAlevel «Lowclampingvoltage »-IEC61000-4-2(ESD)immunitytest Airdischarge:£20kV Contactdischarge:+15kV -IEC61000-4-4(EFT)40A(5/50ns) -IEC61000-4-5(Lightning):4.0A

28S

型号：M28S；Package：SOT-23；Excellent HFE Linearity, High DV current gain

FEATURES ExcellenthFELinearity HighDCCurrentGain APPLICATIONS Generalpurposeapplication,switchingapplication.

28S

型号：M28S；Package：SOT-23；NPN Silicon Epitaxial Planar Transistor

FEATURES ●ExcellentHFELinearity. ●HighDCcurrentgain. APPLICATIONS ●Generalpurposeapplication,switchingapplication.

28S

型号：M28S；Package：SOT-23；NPN Silicon Epitaxial Planar Transistor

FEATURES ●ExcellentHFELinearity. ●HighDCcurrentgain. ●HighPowerDissipation. APPLICATIONS ●Audiooutputdriveramplifier. ●Generalpurposeswitch.

28S

型号：TPD4E002DRLR-TP；Package：SOT-5X3；Low-Capacitance Array with ±15-kV ESD Protection

Features ●Ultralowcapacitance:3.5pF(Max) ●Ultralowleakage:nAlevel ●Lowoperatingvoltage:5.5V ●Lowclampingvoltage ●Complieswithfollowingstandards: -IEC61000-4-2(ESD)immunitytest Airdischarge:±20kV Contactdischarge:±15kV -IEC61000-4-4(EFT)40A(5/50ns) ●ROHS

28S

型号：TPESD4002X5；Package：SOT-5X3；Low-Capacitance Array with 15-kV ESD Protection

Features Ultralowcapacitance:3.5pF(Max) Ultralowleakage:nAlevel Lowoperatingvoltage:5.5V Lowclampingvoltage Complieswithfollowingstandards: —|IEC61000-4-2(ESD)immunitytest Airdischarge:+20kV Contactdischarge:+15kV —IEC61000-4-4(EFT)40A(5/50ns) ROHSCompliant

28S

型号：DZQA6V8AXV5；Package：SOT-5X3；Low-Capacitance Array with ±15-kV ESD Protection

28S

型号：ESDA6V8AV5；Package：SOT-5X3；Low-Capacitance Array with ±15-kV ESD Protection

28S

型号：M28S；Package：SOT-23；NPN Silicon Epitaxial Planar Transistor

28S

型号：MMBT9014D；NPN Transistor