8 MBIT (1 MBIT x 8) FLASH MEMORY

PRODUCT OVERVIEW The VE28F008 is a high-performance 8 Mbit (8,388,608 bit) memory organized as 1 Mbyte (1,048,576 bytes) of 8 bits each. Sixteen 64 Kbyte (65,536 byte) blocks are included on the VE28F008. A memory map is shown in Figure 4 of this specification. A block erase operation erases one

文件：381.7 Kbytes 页数：26 Pages

Intel

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8-MBIT (1-MBIT x 8) FlashFileTM MEMORY

Intel’s 28F008SA 8-Mbit FlashFileTM Memory is the highest density nonvolatile read/write solution for solid-state storage. The 28F008SA’s extended cycling, symmetrically blocked architecture, fast access time, write automation and low power consumption provide a more reliable, lower power, lighter

文件：466.6 Kbytes 页数：33 Pages

Intel

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8-MBIT (1 MBIT x 8) FLASHFILETM MEMORY

PRODUCT OVERVIEW The 28F008SA-L is a high-performance 8-Mbit (8,388,608-bit) memory organized as 1 Mbyte (1,048,576 bytes) of 8 bits each. Sixteen 64-Kbyte (65,536-byte) blocks are included on the 28F008SA-L. A memory map is shown in Figure 6 of this specification. A block erase operation erases

文件：437.93 Kbytes 页数：28 Pages

Intel

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8 MBIT (1 MBIT x 8) FLASH MEMORY

PRODUCT OVERVIEW The VE28F008 is a high-performance 8 Mbit (8,388,608 bit) memory organized as 1 Mbyte (1,048,576 bytes) of 8 bits each. Sixteen 64 Kbyte (65,536 byte) blocks are included on the VE28F008. A memory map is shown in Figure 4 of this specification. A block erase operation erases one

文件：381.7 Kbytes 页数：26 Pages

Intel

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1024K (128K x 8) CMOS FLASH MEMORY

28F010 1024K (128K X 8) CMOS FLASH MEMORY Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewrit

文件：405.78 Kbytes 页数：30 Pages

Intel

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SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e

文件：304.24 Kbytes 页数：48 Pages

Intel

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28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY

INTRODUCTION The documentation of the Intel 28F016SA memory device includes this datasheet, a detailed user’s manual, and a number of application notes, all of which are referenced at the end of this datasheet. Includes Commercial and Extended Temperature Specifications ■ User-Selectable 3.3V o

文件：840.46 Kbytes 页数：55 Pages

Intel

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16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY

Intel’s 28F016SV 16-Mbit FlashFile™ memory is a revolutionary architecture which is the ideal choice for designing embedded direct-execute code and mass storage data/file flash memory systems. With innovative capabilities, low-power operation, user-selectable VPP voltage and high read/program perf

文件：635.76 Kbytes 页数：63 Pages

Intel

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16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY

INTRODUCTION The documentation of the Intel 28F016XD flash memory device includes this datasheet, a detailed user’s manual, and a number of application notes and design tools, all of which are referenced in Appendix B. The datasheet is intended to give an overview of the chip feature-set and of

文件：1.15703 Mbytes 页数：54 Pages

Intel

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16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY

Intel’s 28F016XS 16-Mbit flash memory is a revolutionary architecture which is the ideal choice for designing truly revolutionary high-performance products. Combining very high read performance with the intrinsic nonvolatility of flash memory, the 28F016XS eliminates the traditional redundant memo

文件：1.26515 Mbytes 页数：54 Pages

Intel

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