3 Volt Intel Advanced Boot Block Flash Memory

Device Description This section provides an overview of the Intel® Advanced+ Boot Block Flash Memory (C3) device features, packaging, signal naming, and device architecture. Product Overview The C3 device provides high-performance asynchronous reads in package-compatible densities with a 16 bit

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Intel

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Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

文件：1.12721 Mbytes 页数：68 Pages

Intel

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StrataFlash Wireless Memory

The Intel StrataFlash® wireless memory (L18) device is the latest generation of Intel StrataFlash® memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 V low voltage, multi-level cell (M

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Intel

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1.8 Volt Intel StrataFlash짰 Wireless Memory with 3.0-Volt I/O (L30)

The 1.8 Volt Intel StrataFlash® wireless memory with 3-Volt I/O product is the latest generation of Intel StrataFlash® memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 volt low-volta

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Intel

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Intel StrataFlash Embedded Memory

Introduction This document provides information about the Intel StrataFlash® Embedded Memory (P30) device and describes its features, operation, and specifications. Product Features ■ High performance — 85/88 ns initial access — 40 MHz with zero wait states, 20 ns clock-to data output

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Intel

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SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e

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Intel

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SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT

SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT Intel’s Smart 5 boot block flash memory family provides 2-, 4-, and 8-Mbit memories featuring high-density, low-cost, nonvolatile, read/write storage solutions for a wide range of applications. Their asymmetrically blocked architecture, flex

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Intel

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Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

文件：1.12721 Mbytes 页数：68 Pages

Intel

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3 Volt Intel Advanced Boot Block Flash Memory

Device Description This section provides an overview of the Intel® Advanced+ Boot Block Flash Memory (C3) device features, packaging, signal naming, and device architecture. Product Overview The C3 device provides high-performance asynchronous reads in package-compatible densities with a 16 bit

文件：177.81 Kbytes 页数：18 Pages

Intel

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FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT

INTRODUCTION This datasheet contains 8- and 16-Mbit Fast Boot Block memory information. Section 1.0 provides a flash memory overview. Sections 2.0 through 8.0 describe the memory functionality and electrical specifications for extended and automotive temperature product offerings. ■ High Perform

文件：277.1 Kbytes 页数：47 Pages

Intel

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