小功率MOS系列

FM

富满微

9V P channel enhanced MOS FET

文件：194.72 Kbytes 页数：3 Pages

FUMAN

富满微

P-Channel Enhancement Mode Power MOSFET

Description The 2301A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.01208 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

P-Channel Enhancement Mode Power MOSFET

Description The 2301H uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：857.41 Kbytes 页数：6 Pages

GOFORD

谷峰半导体