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BQ2201SN-N

丝印:2201-N;Package:SOIC;SRAM Nonvolatile Controller Unit

Features Power monitoring and switching for 3-volt battery-backup applications Write-protect control 3-volt primary cell inputs Less than 10ns chip-enable propagation delay 5% or 10% supply operation

文件:226.76 Kbytes 页数:17 Pages

TI

德州仪器

BQ2201SN-N

丝印:2201-N;Package:SOIC;SRAM Nonvolatile Controller Unit

Features Power monitoring and switching for 3-volt battery-backup applications Write-protect control 3-volt primary cell inputs Less than 10ns chip-enable propagation delay 5% or 10% supply operation

文件:226.76 Kbytes 页数:17 Pages

TI

德州仪器

BQ2201SN-N.B

丝印:2201-N;Package:SOIC;SRAM Nonvolatile Controller Unit

Features Power monitoring and switching for 3-volt battery-backup applications Write-protect control 3-volt primary cell inputs Less than 10ns chip-enable propagation delay 5% or 10% supply operation

文件:226.76 Kbytes 页数:17 Pages

TI

德州仪器

BQ2201SN-N.B

丝印:2201-N;Package:SOIC;SRAM Nonvolatile Controller Unit

Features Power monitoring and switching for 3-volt battery-backup applications Write-protect control 3-volt primary cell inputs Less than 10ns chip-enable propagation delay 5% or 10% supply operation

文件:226.76 Kbytes 页数:17 Pages

TI

德州仪器

BQ2201SN-NTR

丝印:2201-N;Package:SOIC;SRAM Nonvolatile Controller Unit

Features Power monitoring and switching for 3-volt battery-backup applications Write-protect control 3-volt primary cell inputs Less than 10ns chip-enable propagation delay 5% or 10% supply operation

文件:226.76 Kbytes 页数:17 Pages

TI

德州仪器

BQ2201SN-NTR

丝印:2201-N;Package:SOIC;SRAM Nonvolatile Controller Unit

Features Power monitoring and switching for 3-volt battery-backup applications Write-protect control 3-volt primary cell inputs Less than 10ns chip-enable propagation delay 5% or 10% supply operation

文件:226.76 Kbytes 页数:17 Pages

TI

德州仪器

BQ2201SN-NTR.B

丝印:2201-N;Package:SOIC;SRAM Nonvolatile Controller Unit

Features Power monitoring and switching for 3-volt battery-backup applications Write-protect control 3-volt primary cell inputs Less than 10ns chip-enable propagation delay 5% or 10% supply operation

文件:226.76 Kbytes 页数:17 Pages

TI

德州仪器

BQ2201SN-NTR.B

丝印:2201-N;Package:SOIC;SRAM Nonvolatile Controller Unit

Features Power monitoring and switching for 3-volt battery-backup applications Write-protect control 3-volt primary cell inputs Less than 10ns chip-enable propagation delay 5% or 10% supply operation

文件:226.76 Kbytes 页数:17 Pages

TI

德州仪器

BQ2201SN-NTRG4.B

丝印:2201-N;Package:SOIC;SRAM Nonvolatile Controller Unit

Features Power monitoring and switching for 3-volt battery-backup applications Write-protect control 3-volt primary cell inputs Less than 10ns chip-enable propagation delay 5% or 10% supply operation

文件:226.76 Kbytes 页数:17 Pages

TI

德州仪器

BQ2201SN-NTRG4.B

丝印:2201-N;Package:SOIC;SRAM Nonvolatile Controller Unit

Features Power monitoring and switching for 3-volt battery-backup applications Write-protect control 3-volt primary cell inputs Less than 10ns chip-enable propagation delay 5% or 10% supply operation

文件:226.76 Kbytes 页数:17 Pages

TI

德州仪器

详细参数

  • 型号:

    2201-N

  • 功能描述:

    IC SRAM NONVOLATILE CNTRLR 8SOIC

  • RoHS:

  • 类别:

    集成电路(IC) >> 存储器 - 控制器

  • 系列:

    -

  • 标准包装:

    45

  • 控制器类型:

    静态 RAM(SRAM)

  • 电源电压:

    4.5 V ~ 5.5 V

  • 工作温度:

    0°C ~ 70°C

  • 封装/外壳:

    16-SOIC(0.295,7.50mm 宽)

  • 供应商设备封装:

    16-SOIC W

  • 包装:

    管件

供应商型号品牌批号封装库存备注价格
TEXAS INSTRUMENTS
23+
SOIC8
9600
全新原装正品!一手货源价格优势!
询价
TI
24+
SOIC-8
8000
只做原装
询价
Texas Instruments
25+
8-SOIC(0.154,3.90mm 宽)
25000
Texas Instruments专用IC-BQ2201SN-N即刻询购立享优惠#长期有货
询价
TI
23+
8-SOIC
12000
TI现货商!原装正品!
询价
TI(德州仪器)
2022+原装正品
SOIC-8
18000
支持工厂BOM表配单 公司只做原装正品货
询价
TI/德州仪器
24+
SOP8
10000
只做原装,实单最低价支持
询价
TI
16+
原厂封装
10000
全新原装正品,代理优势渠道供应,欢迎来电咨询
询价
TI
19+
SOP8
16200
原装正品,现货特价
询价
Texas Instruments
24+
8-SOIC
65200
一级代理/放心采购
询价
TI(德州仪器)
2447
SOIC-8
315000
75个/管一级代理专营品牌!原装正品,优势现货,长期
询价
更多2201-N供应商 更新时间2025-9-14 9:03:00