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BQ2201SN-N

Marking:2201-N;Package:SOIC;SRAM Nonvolatile Controller Unit

Features Powermonitoringandswitching for3-voltbattery-backupapplications Write-protectcontrol 3-voltprimarycellinputs Lessthan10nschip-enable propagationdelay 5%or10%supplyoperation

TI2Texas Instruments

德州仪器美国德州仪器公司

BQ2201SN-N

Marking:2201-N;Package:SOIC;SRAM Nonvolatile Controller Unit

Features Powermonitoringandswitching for3-voltbattery-backupapplications Write-protectcontrol 3-voltprimarycellinputs Lessthan10nschip-enable propagationdelay 5%or10%supplyoperation

TI2Texas Instruments

德州仪器美国德州仪器公司

BQ2201SN-N.B

Marking:2201-N;Package:SOIC;SRAM Nonvolatile Controller Unit

Features Powermonitoringandswitching for3-voltbattery-backupapplications Write-protectcontrol 3-voltprimarycellinputs Lessthan10nschip-enable propagationdelay 5%or10%supplyoperation

TI2Texas Instruments

德州仪器美国德州仪器公司

BQ2201SN-N.B

Marking:2201-N;Package:SOIC;SRAM Nonvolatile Controller Unit

Features Powermonitoringandswitching for3-voltbattery-backupapplications Write-protectcontrol 3-voltprimarycellinputs Lessthan10nschip-enable propagationdelay 5%or10%supplyoperation

TI2Texas Instruments

德州仪器美国德州仪器公司

BQ2201SN-NTR

Marking:2201-N;Package:SOIC;SRAM Nonvolatile Controller Unit

Features Powermonitoringandswitching for3-voltbattery-backupapplications Write-protectcontrol 3-voltprimarycellinputs Lessthan10nschip-enable propagationdelay 5%or10%supplyoperation

TI2Texas Instruments

德州仪器美国德州仪器公司

BQ2201SN-NTR

Marking:2201-N;Package:SOIC;SRAM Nonvolatile Controller Unit

Features Powermonitoringandswitching for3-voltbattery-backupapplications Write-protectcontrol 3-voltprimarycellinputs Lessthan10nschip-enable propagationdelay 5%or10%supplyoperation

TI2Texas Instruments

德州仪器美国德州仪器公司

BQ2201SN-NTR.B

Marking:2201-N;Package:SOIC;SRAM Nonvolatile Controller Unit

Features Powermonitoringandswitching for3-voltbattery-backupapplications Write-protectcontrol 3-voltprimarycellinputs Lessthan10nschip-enable propagationdelay 5%or10%supplyoperation

TI2Texas Instruments

德州仪器美国德州仪器公司

BQ2201SN-NTR.B

Marking:2201-N;Package:SOIC;SRAM Nonvolatile Controller Unit

Features Powermonitoringandswitching for3-voltbattery-backupapplications Write-protectcontrol 3-voltprimarycellinputs Lessthan10nschip-enable propagationdelay 5%or10%supplyoperation

TI2Texas Instruments

德州仪器美国德州仪器公司

BQ2201SN-NTRG4.B

Marking:2201-N;Package:SOIC;SRAM Nonvolatile Controller Unit

Features Powermonitoringandswitching for3-voltbattery-backupapplications Write-protectcontrol 3-voltprimarycellinputs Lessthan10nschip-enable propagationdelay 5%or10%supplyoperation

TI2Texas Instruments

德州仪器美国德州仪器公司

BQ2201SN-NTRG4.B

Marking:2201-N;Package:SOIC;SRAM Nonvolatile Controller Unit

Features Powermonitoringandswitching for3-voltbattery-backupapplications Write-protectcontrol 3-voltprimarycellinputs Lessthan10nschip-enable propagationdelay 5%or10%supplyoperation

TI2Texas Instruments

德州仪器美国德州仪器公司

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