型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
丝印:2204A;Package:SOIC;X4 SRAM Nonvolatile Controller Unit Features Power monitoring and switching for 3-volt battery-backup applications Write-protect control 2-input decoder for control of up to 4 banks of SRAM 3-volt primary cell inputs Less than 10ns chip-enable propagation delay 5% or 10% supply operation 文件:178 Kbytes 页数:14 Pages | TI 德州仪器 | TI | ||
丝印:2204A;Package:SOIC;X4 SRAM Nonvolatile Controller Unit Features Power monitoring and switching for 3-volt battery-backup applications Write-protect control 2-input decoder for control of up to 4 banks of SRAM 3-volt primary cell inputs Less than 10ns chip-enable propagation delay 5% or 10% supply operation 文件:178 Kbytes 页数:14 Pages | TI 德州仪器 | TI | ||
丝印:2204A;Package:SOIC;X4 SRAM Nonvolatile Controller Unit Features Power monitoring and switching for 3-volt battery-backup applications Write-protect control 2-input decoder for control of up to 4 banks of SRAM 3-volt primary cell inputs Less than 10ns chip-enable propagation delay 5% or 10% supply operation 文件:178 Kbytes 页数:14 Pages | TI 德州仪器 | TI | ||
丝印:2204A;Package:SOIC;X4 SRAM Nonvolatile Controller Unit Features Power monitoring and switching for 3-volt battery-backup applications Write-protect control 2-input decoder for control of up to 4 banks of SRAM 3-volt primary cell inputs Less than 10ns chip-enable propagation delay 5% or 10% supply operation 文件:178 Kbytes 页数:14 Pages | TI 德州仪器 | TI | ||
丝印:2204A;Package:SOIC;X4 SRAM Nonvolatile Controller Unit Features Power monitoring and switching for 3-volt battery-backup applications Write-protect control 2-input decoder for control of up to 4 banks of SRAM 3-volt primary cell inputs Less than 10ns chip-enable propagation delay 5% or 10% supply operation 文件:178 Kbytes 页数:14 Pages | TI 德州仪器 | TI | ||
丝印:2204A;Package:SOIC;X4 SRAM Nonvolatile Controller Unit Features Power monitoring and switching for 3-volt battery-backup applications Write-protect control 2-input decoder for control of up to 4 banks of SRAM 3-volt primary cell inputs Less than 10ns chip-enable propagation delay 5% or 10% supply operation 文件:178 Kbytes 页数:14 Pages | TI 德州仪器 | TI | ||
丝印:2204APN;Package:PDIP;X4 SRAM Nonvolatile Controller Unit Features Power monitoring and switching for 3-volt battery-backup applications Write-protect control 2-input decoder for control of up to 4 banks of SRAM 3-volt primary cell inputs Less than 10ns chip-enable propagation delay 5% or 10% supply operation 文件:178 Kbytes 页数:14 Pages | TI 德州仪器 | TI | ||
丝印:2204APN;Package:PDIP;X4 SRAM Nonvolatile Controller Unit Features Power monitoring and switching for 3-volt battery-backup applications Write-protect control 2-input decoder for control of up to 4 banks of SRAM 3-volt primary cell inputs Less than 10ns chip-enable propagation delay 5% or 10% supply operation 文件:178 Kbytes 页数:14 Pages | TI 德州仪器 | TI |
详细参数
- 型号:
2204A
- 功能描述:
IC X4 SRAM NONVOL CTRLR 16-SOIC
- RoHS:
是
- 类别:
集成电路(IC) >> 存储器 - 控制器
- 系列:
-
- 标准包装:
45
- 控制器类型:
静态 RAM(SRAM)
- 电源电压:
4.5 V ~ 5.5 V
- 工作温度:
0°C ~ 70°C
- 封装/外壳:
16-SOIC(0.295,7.50mm 宽)
- 供应商设备封装:
16-SOIC W
- 包装:
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Texas Instruments |
25+ |
16-SOIC(0.154,3.90mm 宽) |
25000 |
Texas Instruments专用IC-BQ2204ASN-N即刻询购立享优惠#长期有货 |
询价 | ||
TI |
23+ |
16-SOIC |
12000 |
TI现货商!原装正品! |
询价 | ||
TI(德州仪器) |
2022+原装正品 |
SOIC-16 |
18000 |
支持工厂BOM表配单 公司只做原装正品货 |
询价 | ||
TexasInstruments |
18+ |
ICX4SRAMNONVOLCTRLR16-SO |
6580 |
公司原装现货/欢迎来电咨询! |
询价 | ||
TI |
16+ |
SOIC |
10000 |
原装正品 |
询价 | ||
Texas Instruments |
24+ |
16-SOIC |
65200 |
一级代理/放心采购 |
询价 | ||
TI(德州仪器) |
2447 |
SOIC-16 |
315000 |
40个/管一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
TI |
20+ |
SOP-16 |
80 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Texas |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 | |||
TI |
2021 |
BGA |
1000 |
全新、原装 |
询价 |
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