位置传感器

DI-SORIC

美台半导体

UHV240-AS/AS

文件：181.13 Kbytes 页数：6 Pages

PhoenixPHOENIX CONTACT

菲尼克斯德国菲尼克斯电气集团

包装：散装 类别：连接器，互连器件 DIN 导轨，通道 描述：CONN TERM BLK FEED 500MCM-2/0AWG

PhoenixPHOENIX CONTACT

菲尼克斯德国菲尼克斯电气集团

High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz

文件：740.31 Kbytes 页数：16 Pages

Infineon

英飞凌

High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz

Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz frequency band. Features include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceramic package. Features • Broadband

文件：528.45 Kbytes 页数：16 Pages

Cree

科锐

High Power RF LDMOS Field Effect Transistor 300 W, 2110-2170 MHz

Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz frequency band. Features include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceramic package. Features • Broadband

文件：674.06 Kbytes 页数：16 Pages

Infineon

英飞凌