丝印：20W120G34AG；Package：HiP247-4；Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an HiP247-4 package

Features • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) •

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STMICROELECTRONICS

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