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STH200N10WF7-2	文件：377.43 Kbytes Page：14 Pages	Marking：200N10WF7；Package：H2PAK-2；N-channel 100 V, 3.2 mΩ typ., 180 A, STripFET F7 Power MOSFET N-channel 100 V, 3.2 mΩ typ., 180 A, STripFET F7 Power MOSFET Features •Best-in-classSOAcapability •Highcurrentsurgecapability •Extremelylowon-resistance Applications •Hot-swap •Electronicfuse •Loadswitch •In-rushcurrentlimiter Description ThisN-channelPowerMOSFETutilizestheSTripFETF7technologywithan enhancedtrenchgat	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS

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文件：377.43 Kbytes

Page：14 Pages

Marking：200N10WF7；Package：H2PAK-2；N-channel 100 V, 3.2 mΩ typ., 180 A, STripFET F7 Power MOSFET N-channel 100 V, 3.2 mΩ typ., 180 A, STripFET F7 Power MOSFET

Features •Best-in-classSOAcapability •Highcurrentsurgecapability •Extremelylowon-resistance Applications •Hot-swap •Electronicfuse •Loadswitch •In-rushcurrentlimiter Description ThisN-channelPowerMOSFETutilizestheSTripFETF7technologywithan enhancedtrenchgat

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

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