1SS226

SOT-23Plastic-EncapsulateDIODE

SOT-23Plastic-EncapsulateDIODE Features ●Powerdissipation PD:150mW(Tamb=25°C) ●ForwardCurrent IF:100mA ●ReverseVoltage VR:80V ●Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55°Cto+150°C

1SS226

150mWSWITCHINGDIODE

1SS226

SwitchingDiodes

Features ◇Lowforwardvoltage:VF(3)=0.9V(typ.) ◇Fastreverserecoverytime:trr=1.6ns(typ.) ◇Smalltotalcapacitance:CT=0.9pF(typ.)

1SS226

Plastic-EncapsulateDiodes

SWITCHINGDIODES Features: Fastspeedandshortreverserecoverytime; Forwardpressurereduction;

1SS226

SwitchingDiodes

FEATURES ●Lowforwardvoltage:VF(3)=0.9V(typ.) ●Fastreverserecoverytime:trr=1.6ns(typ.) ●Smalltotalcapacitance:CT=0.9pF(typ.)

1SS226

SWITCHINGDIODE

SWITCHINGDIODE FEATURES ●Lowforwardvoltage ●Fastreverserecoverytime ●Smalltotalcapacitance

1SS226

UltraHighSpeedSwitchingApplication

UltraHighSpeedSwitchingApplication ●Smallpackage:SC-59 ●Lowforwardvoltage:VF(3)=0.9V(typ.) ●Fastreverserecoverytime:trr=1.6ns(typ.) ●Smalltotalcapacitance:CT=0.9pF(typ.)

1SS226

UltraHighSpeedSwitching

Featrues ●Lowforwardvoltage:VF(3)=0.9V(typ.) ●Fastreverserecoverytime:trr=1.6ns(typ.) ●Smalltotalcapacitance:CT=0.9pF(typ.) ●WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

1SS226

SOT-23Plastic-EncapsulateDiodes

FEATURES ●Lowforwardvoltage ●Fastreverserecoverytime ●Smalltotalcapacitance

1SS226

SOT-23SWITCHINGDIODE