HIGH SPEED SWITCHING DIODE

FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max. 90 V • Pb / RoHS Free

文件：78.54 Kbytes 页数：2 Pages

EIC

SWITCHING DIODES

文件：82.12 Kbytes 页数：3 Pages

LRC

乐山无线电

High Speed Switching Diode

Features • Lead Free Finish/Rohs Compliant (Note1) (PSuffix designates Compliant. See ordering information) • Glass sealed envelope. • High speed. (trr=1.2ns Typ) • High reliability. • Silicon epitaxial planar • Marking : Cathode band and type number • Moisture Sensitivity Lev

文件：470.53 Kbytes 页数：3 Pages

MCC

130mA Axial Leaded High Speed Switching Diode

Features • High switching speed: max. 4 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max. 90 V • Pb / RoHS Free

文件：193.4 Kbytes 页数：2 Pages

SUNMATE

森美特

Switching diode

Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. Applications High speed switching Construction Silicon epitaxial planar

文件：150.46 Kbytes 页数：4 Pages

ROHM

罗姆

Switching diode

Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. Applications High speed switching Construction Silicon epitaxial planar

文件：62.3 Kbytes 页数：2 Pages

ROHM

罗姆

Silicon Epitaxial Planar Switching Diode

Features • Glass sealed envelope • High speed • High reliability Applications • High-speed switching

文件：97.74 Kbytes 页数：2 Pages

GWSEMI

唯圣电子

300mW Hermetically Sealed Glass Switching Diode

FEATURES - Fast switching device (trr

文件：96.44 Kbytes 页数：2 Pages

TSC

台湾半导体

Switching diode

Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. Applications High speed switching Construction Silicon epitaxial planar

文件：62.3 Kbytes 页数：2 Pages

ROHM

罗姆

Switching diode

Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. Applications High speed switching Construction Silicon epitaxial planar

文件：62.3 Kbytes 页数：2 Pages

ROHM

罗姆