1R

型号：FMMT5089；Package：SOT-23；SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS

SOT23NPNSILICONPLANARSMALLSIGNALTRANSISTORS PARTMARKINGDETAIL-FMMT5088-1Q FMMT5089-1R COMPLEMENTARYTYPES-FMMT5088-FMMT5087 FMMT5089-NoneAvailable

1R

型号：HDC1080DMBR；Package：WSON；HDC1080 Low Power, High Accuracy Digital Humidity Sensor with Temperature Sensor

1Features 1•RelativeHumidityAccuracy±2%(typical) •TemperatureAccuracy±0.2°C(typical) •ExcellentStabilityatHighHumidity •14BitMeasurementResolution •100nASleepModeCurrent •AverageSupplyCurrent: –710nA@1sps,11bitRHMeasurement –1.3μA@1sps,11bitRH

1R

型号：HDC1080DMBR.A；Package：WSON；HDC1080 Low Power, High Accuracy Digital Humidity Sensor with Temperature Sensor

1Features 1•RelativeHumidityAccuracy±2%(typical) •TemperatureAccuracy±0.2°C(typical) •ExcellentStabilityatHighHumidity •14BitMeasurementResolution •100nASleepModeCurrent •AverageSupplyCurrent: –710nA@1sps,11bitRHMeasurement –1.3μA@1sps,11bitRH

1R

型号：HDC1080DMBT；Package：WSON；HDC1080 Low Power, High Accuracy Digital Humidity Sensor with Temperature Sensor

1Features 1•RelativeHumidityAccuracy±2%(typical) •TemperatureAccuracy±0.2°C(typical) •ExcellentStabilityatHighHumidity •14BitMeasurementResolution •100nASleepModeCurrent •AverageSupplyCurrent: –710nA@1sps,11bitRHMeasurement –1.3μA@1sps,11bitRH

1R

型号：KST5089；Package：SOT-23；Low Noise Transistor

LowNoiseTransistor

1R

型号：KST5089；Package：SOT-23；Low Noise Transistor

LowNoiseTransistor

1R

型号：MM3Z6V2；Silicon Planar Zener Diodes

FEATURES •Totalpowerdissipation:Max.200mW. •Widezenerreversevoltagerange2.0Vto75V. •Smallplasticpackagesuitableforsurfacemounteddesign. •Toleranceapproximately±5

1R

型号：MMBT5089；Package：SOT-23；NPN General Purpose Amplifier

NPNGeneralPurposeAmplifier Thisdeviceisdesignedforlownoise,highgain,generalpurposeamplifierapplicationsatcollectorcurrentsfrom1µAto50mA.

1R

型号：MMBT5089；Package：SOT-23；NPN General Purpose Amplifier

NPNGeneralPurposeAmplifier Thisdeviceisdesignedforlownoise,highgain,generalpurposeamplifierapplicationsatcollectorcurrentsfrom1µAto50mA.

1R

型号：PBSS3515E；Package：SC-75；15 V, 0.5 A PNP low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors