丝印：1R；Package：SOT-23；SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS

SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS PARTMARKING DETAIL - FMMT5088 - 1Q FMMT5089 - 1R COMPLEMENTARY TYPES - FMMT5088 - FMMT5087 FMMT5089 - None Available

文件：31.43 Kbytes 页数：1 Pages

Zetex

丝印：1R；Package：WSON；HDC1080 Low Power, High Accuracy Digital Humidity Sensor with Temperature Sensor

1 Features 1• Relative Humidity Accuracy ±2% (typical) • Temperature Accuracy ±0.2°C (typical) • Excellent Stability at High Humidity • 14 Bit Measurement Resolution • 100 nA Sleep Mode Current • Average Supply Current: – 710 nA @ 1sps, 11 bit RH Measurement – 1.3 μA @ 1sps, 11 bit RH

文件：756.62 Kbytes 页数：29 Pages

TI

德州仪器

丝印：1R；Package：WSON；HDC1080 Low Power, High Accuracy Digital Humidity Sensor with Temperature Sensor

1 Features 1• Relative Humidity Accuracy ±2% (typical) • Temperature Accuracy ±0.2°C (typical) • Excellent Stability at High Humidity • 14 Bit Measurement Resolution • 100 nA Sleep Mode Current • Average Supply Current: – 710 nA @ 1sps, 11 bit RH Measurement – 1.3 μA @ 1sps, 11 bit RH

文件：756.62 Kbytes 页数：29 Pages

TI

德州仪器

丝印：1R；Package：WSON；HDC1080 Low Power, High Accuracy Digital Humidity Sensor with Temperature Sensor

1 Features 1• Relative Humidity Accuracy ±2% (typical) • Temperature Accuracy ±0.2°C (typical) • Excellent Stability at High Humidity • 14 Bit Measurement Resolution • 100 nA Sleep Mode Current • Average Supply Current: – 710 nA @ 1sps, 11 bit RH Measurement – 1.3 μA @ 1sps, 11 bit RH

文件：756.62 Kbytes 页数：29 Pages

TI

德州仪器

丝印：1R；Package：SOT-23；Low Noise Transistor

Low Noise Transistor

文件：56.67 Kbytes 页数：5 Pages

Fairchild

仙童半导体

丝印：1R；Package：SOT-23；Low Noise Transistor

Low Noise Transistor

文件：62.15 Kbytes 页数：5 Pages

Fairchild

仙童半导体

丝印：1R；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 200mW. • Wide zener reverse voltage range 2.0V to 75V. • Small plastic package suitable for surface mounted design. • Tolerance approximately±5

文件：537.22 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：1R；Package：SOT-23；NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.

文件：102.98 Kbytes 页数：7 Pages

Fairchild

仙童半导体

丝印：1R；Package：SOT-23；NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.

文件：98.34 Kbytes 页数：7 Pages

Fairchild

仙童半导体

丝印：1R；Package：SC-75；15 V, 0.5 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：243.02 Kbytes 页数：13 Pages

NEXPERIA

安世