ESDS302DBVR-TP

Marking：1R5B；Package：SOT23-6；2-Line ESD Protection Diode Array

Features •Ultralowleakage:nAlevel •Ultralowoperatingvoltage:3.6V •Ultralowclampingvoltage •Complieswithfollowingstandards: -IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV -IEC61000-4-4(EFT)80A(5/50ns) -IEC61000-4-5(Lightning)10A

ESDS304DBVR-TP

Marking：1R3B；Package：SOT23-6；4-Line ESD Protection Diode Array

Features *Ultralowleakage:nAlevel *Ultralowoperatingvoltage:3.6V *Ultralowclampingvoltage *Complieswithfollowingstandards: -IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contact discharge:±30kV -IEC61000-4-4(EFT)80A(5/50ns) -IEC61000-4-5(Lightning)10A

ESDS312DBVR

Marking：1R4B；Package：SOT-23；ESDS31x Data-Line Surge and ESD Protection Diode Array

1Features •IEC61000-4-2ESDprotection: –±30kVContactDischarge –±30kVAirGapDischarge •IEC61000-4-4EFTprotection: –80A(5/50ns) •IEC61000-4-5surgeprotection: –25A(8/20μs) •IOcapacitance: –4.5pF(typical) •DCbreakdownvoltage:5.5V(minimum) •Ultralowleakagec

ESDS314DBVR

Marking：1R2B；Package：SOT-23；ESDS31x Data-Line Surge and ESD Protection Diode Array

1Features •IEC61000-4-2ESDprotection: –±30kVContactDischarge –±30kVAirGapDischarge •IEC61000-4-4EFTprotection: –80A(5/50ns) •IEC61000-4-5surgeprotection: –25A(8/20μs) •IOcapacitance: –4.5pF(typical) •DCbreakdownvoltage:5.5V(minimum) •Ultralowleakagec

INA500AIDCKR

Marking：1RJ；Package：SC70；INA500 Cost and Size Optimized, Low Power, 1.7V to 5.5V Difference Amplifier with 1MΩ>>1MΩ Input Impedance

1Features •Optimizedforsmall-size,low-power,andlow-cost •>1MΩUltra-highinputimpedance •Threegainoptions(G=1,0.50,and0.25) •Goodprecisionfor8-bitto12-bitsystems –CMRR:87dB(typical) –Gainerror:±0.01(typical) –Offsetvoltage:±0.70mV(typical) •Spacesaving

INA500AIDCKR

Marking：1RJ；Package：SC70；INA500 Cost and Size Optimized, Low Power, 1.7V to 5.5V Difference Amplifier with 1MΩ>>1MΩ Input Impedance

1Features •Optimizedforsmall-size,low-power,andlow-cost •>1MΩUltra-highinputimpedance •Threegainoptions(G=1,0.50,and0.25) •Goodprecisionfor8-bitto12-bitsystems –CMRR:87dB(typical) –Gainerror:±0.01(typical) –Offsetvoltage:±0.70mV(typical) •Spacesaving

INA500AIDCKR

Marking：1RJ；Package：SC70；INA500 Cost and Size Optimized, Low Power, 1.7V to 5.5V Difference Amplifier with 1MΩ>>1MΩ Input Impedance

1Features •Optimizedforsmall-size,low-power,andlow-cost •>1MΩUltra-highinputimpedance •Threegainoptions(G=1,0.50,and0.25) •Goodprecisionfor8-bitto12-bitsystems –CMRR:87dB(typical) –Gainerror:±0.01(typical) –Offsetvoltage:±0.70mV(typical) •Spacesaving

INA500AIDCKR

Marking：1RJ；Package：SC70；INA500 Cost and Size Optimized, Low Power, 1.7V to 5.5V Difference Amplifier with 1MΩ>>1MΩ Input Impedance

1Features •Optimizedforsmall-size,low-power,andlow-cost •>1MΩUltra-highinputimpedance •Threegainoptions(G=1,0.50,and0.25) •Goodprecisionfor8-bitto12-bitsystems –CMRR:87dB(typical) –Gainerror:±0.01(typical) –Offsetvoltage:±0.70mV(typical) •Spacesaving

INA500BIDCKR

Marking：1RK；Package：SC70；INA500 Cost and Size Optimized, Low Power, 1.7V to 5.5V Difference Amplifier with 1MΩ>>1MΩ Input Impedance

1Features •Optimizedforsmall-size,low-power,andlow-cost •>1MΩUltra-highinputimpedance •Threegainoptions(G=1,0.50,and0.25) •Goodprecisionfor8-bitto12-bitsystems –CMRR:87dB(typical) –Gainerror:±0.01(typical) –Offsetvoltage:±0.70mV(typical) •Spacesaving

INA500CIDCKR

Marking：1RL；Package：SC70；INA500 Cost and Size Optimized, Low Power, 1.7V to 5.5V Difference Amplifier with 1MΩ>>1MΩ Input Impedance

1Features •Optimizedforsmall-size,low-power,andlow-cost •>1MΩUltra-highinputimpedance •Threegainoptions(G=1,0.50,and0.25) •Goodprecisionfor8-bitto12-bitsystems –CMRR:87dB(typical) –Gainerror:±0.01(typical) –Offsetvoltage:±0.70mV(typical) •Spacesaving