丝印：1PE；Package：SC70；INAx181 Bidirectional, Low- and High-Side Voltage Output, Current-Sense Amplifiers

1 Features • Common-mode range (VCM): –0.2 V to +26 V • High bandwidth: 350 kHz (A1 devices) • Offset voltage: – ±150 μV (maximum) at VCM = 0 V – ±500 μV (maximum) at VCM = 12 V • Output slew rate: 2 V/μs • Bidirectional current-sensing capability • Accuracy: – ±1 gain error (maximum) –

文件：2.56681 Mbytes 页数：62 Pages

TI

德州仪器

丝印：1PE；Package：SC70(DCK)；INAx181 Bidirectional, Low- and High-Side Voltage Output, Current-Sense Amplifiers

1 Features • Common-mode range (VCM): –0.2 V to +26 V • High bandwidth: 350 kHz (A1 devices) • Offset voltage: – ±150 μV (maximum) at VCM = 0 V – ±500 μV (maximum) at VCM = 12 V • Output slew rate: 2 V/μs • Bidirectional current-sensing capability • Accuracy: – ±1% gain error (maximum

文件：2.57416 Mbytes 页数：62 Pages

TI

德州仪器

丝印：1PE；Package：SC70(DCK)；INAx181 Bidirectional, Low- and High-Side Voltage Output, Current-Sense Amplifiers

1 Features • Common-mode range (VCM): –0.2 V to +26 V • High bandwidth: 350 kHz (A1 devices) • Offset voltage: – ±150 μV (maximum) at VCM = 0 V – ±500 μV (maximum) at VCM = 12 V • Output slew rate: 2 V/μs • Bidirectional current-sensing capability • Accuracy: – ±1% gain error (maximum

文件：2.57416 Mbytes 页数：62 Pages

TI

德州仪器

丝印：1PE；Package：DFN4D；TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic

Features Ultra small packag e DFN4D (1.0 mm x 1.0 mm; t 0.3 7 mm (typ.)) Wide range output voltage line up (V OUT = 1.0 to 4.5 V) L ow dropout voltage V DO = 175 mV (typ.) at 3.3 V output, I OUT = 300 mA V DO = 21 6 mV (typ.) at 2.5 V output, I OUT = 300 mA V DO = 2 9 7 mV (typ.) at 1.8 V

文件：749.18 Kbytes 页数：20 Pages

TOSHIBA

东芝