丝印：1P3；Package：SC70；SN74LV1T04-Q1 Automotive Single Inverter Gate with Integrated Translation

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classifcation level C4B • Wide operating range of 1.8 V to 5.5 V • Single-supply voltage translator (refer to LVxT Enhanced Inp

文件：1.10851 Mbytes 页数：24 Pages

TI

德州仪器

丝印：1P3；Package：SC70；SN74LV1T04-Q1 Automotive Single Inverter Gate with Integrated Translation

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Wide operating range of 1.8 V to 5.5 V • Single-supply voltage translator (refer to LVxT Enhanced In

文件：1.33008 Mbytes 页数：29 Pages

TI

德州仪器

丝印：1P3；Package：SMV；300 mA CMOS Low Drop-Out Regulator with inrush current protection circuit

The TCR3DF series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and low inrush current. These voltage regulators are available in fixed output voltages between 1.0 V and 4.5 V and capable of driving

文件：839.87 Kbytes 页数：14 Pages

TOSHIBA

东芝

丝印：1P3；Package：DFN4；300 mA CMOS Low Drop-Out Regulator with inrush current protection circuit

The TCR3DM series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and low inrush current. These voltage regulators are available in fixed output voltages between 1.0 V and 4.5 V and capable of drivi

文件：460.78 Kbytes 页数：14 Pages

TOSHIBA

东芝

丝印：1P3；Package：DFN4D；TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic

Features Ultra small packag e DFN4D (1.0 mm x 1.0 mm; t 0.3 7 mm (typ.)) Wide range output voltage line up (V OUT = 1.0 to 4.5 V) L ow dropout voltage V DO = 175 mV (typ.) at 3.3 V output, I OUT = 300 mA V DO = 21 6 mV (typ.) at 2.5 V output, I OUT = 300 mA V DO = 2 9 7 mV (typ.) at 1.8 V

文件：749.18 Kbytes 页数：20 Pages

TOSHIBA

东芝

丝印：1P3；Package：DFN5B；800 mA CMOS Ultra Low Dropout Regulator

1. Description The TCR8BM series are CMOS single-output voltage regulators with an on/off control input, featuring ultra low dropout voltage, high PSRR, low inrush current and fast load transient response. A differentiating feature is the use of a secondary bias rail as a reference voltage that

文件：1.18428 Mbytes 页数：15 Pages

TOSHIBA

东芝

丝印：1P3F；Package：SOT-23；TPS7A05 1-μA Ultralow IQ, 200-mA, Low-Dropout Regulator in a Small-Size Package

1 Features 1• Ultralow IQ: 1 μA (typ), 3 μA (max) – IGND: 6 μA (typ) at 200 mA • Excellent transient response • Packages: – 1.0-mm × 1.0-mm X2SON (4) – 0.65-mm × 0.65-mm DSBGA (4) – SOT-23 (5) – SOT-23 (3) • Input voltage range: 1.4 V to 5.5 V • Output accuracy: 1 typical, 3 maximum • A

文件：3.71576 Mbytes 页数：55 Pages

TI

德州仪器

丝印：1P3F；Package：SOT-23；TPS7A05 1-μA Ultralow IQ, 200-mA, Low-Dropout Regulator in a Small-Size Package

1 Features 1• Ultralow IQ: 1 μA (typ), 3 μA (max) – IGND: 6 μA (typ) at 200 mA • Excellent transient response • Packages: – 1.0-mm × 1.0-mm X2SON (4) – 0.65-mm × 0.65-mm DSBGA (4) – SOT-23 (5) – SOT-23 (3) • Input voltage range: 1.4 V to 5.5 V • Output accuracy: 1 typical, 3 maximum • A

文件：3.71576 Mbytes 页数：55 Pages

TI

德州仪器

丝印：1P3F；Package：SOT-23；1-關A Ultralow IQ, 200-mA, Low-Dropout Regulator in a Small-Size Package

文件：4.17401 Mbytes 页数：52 Pages

TI

德州仪器

丝印：1P3F；Package：SOT-23；1-uA Ultralow IQ, 200-mA, Low-Dropout Regulator in a Small-Size Package

文件：4.18539 Mbytes 页数：50 Pages

TI

德州仪器