MMBT2222A

Marking：1P；Package：SOT-23；NPN Transistor

Features ●EpoxymeetsUL-94V-0flammabilityrating ●Halogenfreeavailableuponrequestbyaddingsuffix”HF” ●MoisureSensitivityLevel1 ●HighConductance ●SurfacemountpackageideallySuitedforAutomatic Insertion

MMBT2222ALT3G

Marking：1P；Package：SOT-23；General Purpose Transistors NPN Silicon

Features •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable

MMBT2222AT

Marking：1P；Package：SOT-523；NPN SWITCHING TRANSISTOR

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryPNPtypeavailable(MMBT2907AT). ●CollectorCurrentCapabilityIc=600mA. ●Ultra-smallsurfacemountpackage. APPLICATIONS ●Generalswitchingandamplification.

MMBT2222AT

Marking：1P；Package：SOT-523；NPN Transistors

■Features ●SmallPackage ●ComplementarytoMMBT2907AT

MMBT2222AU

Marking：1P；Package：SOT-89；Plastic-Encapsulate Transistors

FEATURES Epitaxialplanardieconstruction ComplementaryPNPTypeavailable(MMBT2907AU)

NSVJ6904DSB6T1G

Marking：1P；Package：CPH6；N-Channel JFET ??5 V, 20 to 40 mA, 40 mS, Dual

TheNSVJ6904DSB6isacompositetypeofJFETdesignedfor compactsizeandhighefficiencywhichcanachievehighgain performance.ThisAEC−Q101qualifiedandPPAPcapabledeviceis suitedforautomotiveapplications. Features •Large|yfs| •SmallCiss •UltralowNoiseFigure •CPH6

PMBT2222A

Marking：1P；Package：SOT23；NPN switching transistor

1.Generaldescription NPNswitchingtransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits •Highcurrent(max.600mA) •Lowvoltage(max.40V) •AEC-Q101qualified 3.Applications •Switchingandlinearamplification

PMEG6002EJ

Marking：1P；Package：SC-90；60 V, 0.2 A low VF Schottky barrier rectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin anSOD323F(SC-90)verysmallandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Averageforwardcurrent:IF(AV)≤0.2A •Revers

PMEG6002EJ-Q

Marking：1P；Package：SC-90；200 mA low Vf MEGA Schottky barrier rectifier

1.Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithanintegrated guardringforstressprotection,encapsulatedinanSOD323F(SC-90)verysmallandflatlead Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Av

PMST2222A

Marking：1P；Package：SOT323；NPN switching transistors

FEATURES •Highcurrent(max.600mA) •Lowvoltage(max.40V). APPLICATIONS •High-speedswitchingandlinearamplification. DESCRIPTION NPNswitchingtransistorinaSOT323plasticpackage.PNPcomplement:PMST2907A.