| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
1N5822 | SCHOTTKY BARRIER RECTIFIER ReverseVoltage-20to40VoltsForwardCurrent-3.0Amperes FEATURES ◆PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ◆Metalsiliconjunction,majoritycarrierconduction ◆Guardingforovervoltageprotection ◆Lowpowerloss,highefficiency ◆Highcurrentc | KINGTRONICSKingtronics International Company 金力金力国际公司 | KINGTRONICS | |
1N5822 | 3 AMP SCHOTTKY RECTIFIER AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber. | DIGITRON Digitron Semiconductors | DIGITRON | |
1N5822 | 3.0 AMP SCHOTTKY BARRIER RECTIFIERS VOLTAGERANGE20to40Volts CURRENT3.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 | GWSEMI | |
1N5822 | 3.0A Axial Leaded Schottky Barrier Rectifiers Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForwardVoltageDrop ●ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtection | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | SUNMATE | |
1N5822 | Schottky Barrier Rectifier
| CentralCentral Semiconductor Corp 美国中央半导体 | Central | |
1N5822 | SCHOTTKY BARRIER RECTIFIER ReverseVoltage-20to40VoltsForwardCurrent-3.0Amperes FEATURES ♦PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ♦Metalsiliconjunction,majoritycarrierconduction ♦Guardringforovervoltageprotection ♦Lowpowerloss,higherriciency ♦Highcurrent | CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd. 辰达半导体深圳辰达半导体有限公司 | CHENDA | |
1N5822 | 3.0 AMP SCHOTTKY BARRIER RECTIFIERS VOLTAGERANGE20to40Volts CURRENT3.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | |
1N5822 | SCHOTTKY BARRIER RECTIFIERS VOLTAGERANGE:20---40V CURRENT:3.0A FEATURES ◇Metal-Semiconductorjunctionwithguardring ◇Epitaxialconstruction ◇Lowforwardvoltagedrop,lowswitchinglosses ◇Highsurgecapability ◇Foruseinlowvoltage,highfrequencyinvertersfreewheeling,andpolarityprotectionapplicat | DSK Diode Semiconductor Korea | DSK | |
1N5822 | Low power loss,high efficiency. Features •Lowpowerloss,highefficiency. •Highreliability •Highsurgecurrentcapapbility. •Epitaxialconstruction. •Foruseinlowvoltage,highfrequueninvertersfreewheelingandpolarlityprotectionapplications •PlasticpackagehasUnderwritersLaboratory PlammabilityClas | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | DYELEC | |
1N5822 | SCHOTTKY BARRIER RECTIFLER ReverseVoltage-20to40Volts ForwardCurrent-3.0Amperes FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Metalsiliconjunction,majoritycarrierconduction •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Highcurr | GXELECTRONICSShandong Xinghe Minghui Electronics Co., Ltd 星合电子山东星合明辉电子有限公司 | GXELECTRONICS |
产品属性
- 产品编号：
1N5822
- 制造商：
Taiwan Semiconductor Corporation
- 类别：
分立半导体产品 > 二极管 - 整流器 - 单
- 包装：
卷带（TR）
- 二极管类型：
肖特基
- 电流 - 平均整流 (Io)：
3A
- 速度：
快速恢复 =< 500ns，> 200mA（Io）
- 不同 Vr、F 时电容：
200pF @ 4V，1MHz
- 安装类型：
通孔
- 封装/外壳：
DO-201AD，轴向
- 供应商器件封装：
DO-201AD
- 工作温度 - 结：
-55°C ~ 125°C
- 描述：
DIODE SCHOTTKY 40V 3A DO201AD
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MIC |
13+ |
标准 |
1000 |
公司原装现货 |
询价 | ||
MIC |
2012 |
DIP |
108 |
全新原装 正品现货 |
询价 | ||
TOSHIBA |
2013+ |
SMA |
100 |
公司原装现货,热卖中! |
询价 | ||
CJ |
24+ |
SOD-323 |
6580 |
原装现货! |
询价 | ||
MIC |
23+ |
NA |
7825 |
原装正品!清仓处理! |
询价 | ||
ON |
21+ |
DIP |
5000 |
进口原装,优势现货 |
询价 | ||
TOSHIBA |
18+ |
SK34 |
1790 |
全新原装公司现货 |
询价 | ||
STM |
22+ |
DO-201AD |
6000 |
询价 | |||
原装 |
24+ |
标准 |
52918 |
热卖原装进口 |
询价 | ||
HB |
16+17+ |
DO201AD |
6978 |
原装正品O优势库存 |
询价 |
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