1N5822-E3

Schottky Barrier Rectifier

FEATURES •Guardringforovervoltageprotection •Verysmallconductionlosses •Extremelyfastswitching •Lowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •ComplianttoRoHSdirective2002/95/ECandin  

1N5822-E3/51

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：DO-201AD，轴向 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 40V 3A DO201AD

Vishay General Semiconductor - Diodes Division

1N5822-E3/54

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：DO-201AD，轴向 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 40V 3A DO201AD

Vishay General Semiconductor - Diodes Division

1N5822-E3/73

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：DO-201AD，轴向 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 40V 3A DO201AD

Vishay General Semiconductor - Diodes Division

1N5822

SCHOTTKYRECTIFIER

1N5822

Schottkybarrierrectifiersdiodes

1N5822

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE20to40VoltsCURRENT3.0Amperes FEATURES *Lowswitchingnoise *Lowforwardvoltagedrop *Highcurrentcapability *Highswitchingcapabitity *Highsurgecapability *Highreliability

1N5822

AxialLeadSchottkyPowerRectifiers

1N5822

SCHOTTKYBARRIERRECTIFIER

1N5822

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow-volt

1N5822

3.0ASCHOTTKYBARRIERRECTIFIERS

1N5822

3AMPERESCHOTTKYBARRIERRECTIFIER(VOLTAGE-20to40VoltsCURRENT-3.0Amperes)

VOLTAGE20to40VoltsCURRENT3.0Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Foruseinlowvoltage,highfrequencyinverters,f

1N5822

3AMPERESCHOTTKYBARRIERRECTIFIERSVOLTAGE-20to40VoltsCURRENT-3.0Ampere???

VOLTAGE-20to40VoltsCURRENT-3.0Ampere s

1N5822

SCHOTTKYBARRIERRECTIFIERS3.0AMPERES20,30,40VOLTS

AxialLeadRectifiers ...employingtheSchottkyBarrierprincipleinalargeareametal–to–siliconpowerdiode.State–of–the–artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow–voltage,

1N5822

3AMPERESCHOTTKYBARRIERRECTIFIER

1N5822

3.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●HighCurrentCapability ●LowPowerLoss,HighEfficiency ●HighSurgeCurrentCapability ●ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplications

1N5822

SCHOTTKYBARRIERRECTIFIER

1N5822

3.0AMP.SCHOTTKYBARRIERRECTIFIERS

1N5822

SCHOTTKYBARRIERRECTIFIER

VOLTAGE:20TO40VCURRENT:3.0A FEATURES •Epitaxialconstructionforchip •Highcurrentcapability •Lowforwardvoltagedrop •Lowpowerloss,highefficiency •Highsurgecapability •Hightemperaturesolderingguaranteed: 250°C/10sec/0.375(9.5mm)leadlength at5lbstension

1N5822

3.0AmpereSchottkyBarrierRectifiers

Features •3.0ampereoperationatTA=95°C withnothermalrunaway. •Foruseinlowvoltage,highfrequencyinvertersfree wheeling,andpolarityprotectionapplications.