Diode and Rectifier Devices

This 1N5711UB and 1N5712UB Schottky barrier diode is ceramic encased and offers military grade qualifications for high-reliability applications.  Unidirectional as well as doubler, common anode and common cathode polarities are available.

Microchip

微芯科技

SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT

SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT Qualified per MIL-PRF-19500/444

文件：55.97 Kbytes 页数：2 Pages

MICROSEMI

美高森美

Package：4-SMD，无引线；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SCHOTTKY BARRIER DIODE CERAMIC S

MICROCHIP

微芯科技

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Time • Low Reverse Capacitance • Surface Mount Package Ideally Suited for Automatic Insertion • Lead Free/RoHS Compliant (Note 3)

文件：71.8 Kbytes 页数：3 Pages

DIODES

美台半导体

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching Time • Low Reverse Capacitance • Surface Mount Package Ideally Suited for Automatic Insertion • Lead Free/RoHS Compliant (Note 3)

文件：247.64 Kbytes 页数：3 Pages

DIODES

美台半导体

Surface Mount Schottky Barrier Diode

Voltage Range 70 Volts 250m Watts Power Dissipation Features ◇ Low forward voltage drop ◇ Guard Ring Construction for Transient Protection ◇ Fast switching time ◇ Low Reverse Capacitance ◇ Surface mount package ideally suited for automatic insertion

文件：46.48 Kbytes 页数：2 Pages

TSC

台湾半导体