1N5711UBCC数据手册库存现货美高森美-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
1N5711UBCC	文件：55.97 Kbytes Page：2 Pages	SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N5711UBCC	文件：100 bytes Page：1 Pages	包装：散装封装/外壳：3-SMD，无引线类别：分立半导体产品二极管 - 整流器 - 单描述：SCHOTTKY DIODE	MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司	Microchip
1N5711	文件：52.1 Kbytes Page：3 Pages	SMALLSIGNALSCHOTTKYDIODE DESCRIPTION Metaltosiliconjunctiondiodefeaturinghighbreakdown,lowturn-onvoltageandultrafastswitching.PrimarlyintendedforhighlevelUHF/VHFdetectionandpulseapplicationwithbroaddynamicrange. Matchedbatchesareavailableonrequest.	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
1N5711	文件：25.59 Kbytes Page：2 Pages	SCHOTTKYBARRIERDIODES •1N5711-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/444 •1N5712-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/445 •SCHOTTKYBARRIERDIODES •HERMETICALLYSEALED •METALLURGICALLYBONDED	CDI-DIODE Compensated Deuices Incorporated	CDI-DIODE
1N5711	文件：49.52 Kbytes Page：2 Pages	SCHOTTKYBARRIERSWITCHINGDIODE Features ●Ultra-FastSwitchingSpeed ●HighReverseBreakdownVoltage ●LowForwardVoltageDrop ●GuardRingJunctionProtection	DIODESDiodes Incorporated 达尔科技	DIODES
1N5711	文件：99.85 Kbytes Page：2 Pages	SchottkyDiodes Features •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichis protectedbyaPNjunctionguardring.Thelowfor wardvoltagedropandfastswitchingmakeitideal forprotectionofMOSdevices,steering,biasing andcouplingdiodesforfastswit	GE GE Industrial Company	GE
1N5711	文件：56.87 Kbytes Page：6 Pages	SchottkyBarrierDiodesforGeneralPurposeApplications Description The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcost glasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logorA-Dconv	HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司	HP
1N5711	文件：110.08 Kbytes Page：2 Pages	SchottkyBarrierSwitchingDiode Features •MoistureSensitivity:Level1perJ-STD-020C •HighReverseBreakdownVoltage •LowForwardVoltageDrop •ForGeneralPurposeApplication •Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation	MCCMicro Commercial Components 美微科美微科半导体公司	MCC
1N5711	文件：36.02 Kbytes Page：2 Pages	SCHOTTKYBARRIERDIODES SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N5711	文件：126.35 Kbytes Page：2 Pages	Small-SignalDiodeSchottkyDiodes Features ◆Forgeneralpurposeapplications ◆Metal-on-siliconSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfast switchingmakeitidealforprotectionofMOSdevices,steering, biasingandcouplingdiodesforfastswitching	Good-Ark Good-Ark	Good-Ark
1N5711	文件：46.24 Kbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODES VOLTAGERANGE:70VPOWERDISSIPATION:400mW FEATURES ◇Forgeneralpurposeapplications ◇fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeiti	BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司	BILIN
1N5711	文件：82.78 Kbytes Page：2 Pages	400mWattSmallSignalSchottkyDiode60to70Volts Features •HighReverseBreakdownVoltage •LowForwardVoltageDrop •ForGeneralPurposeApplication	CHENYIShanghai Lunsure Electronic Tech 商朗电子上海商朗电子科技有限公司	CHENYI
1N5711	文件：30.8 Kbytes Page：2 Pages	SCHOTTKYBARRIERDIODES VRRM:70V,60V FEATURES: •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiode	SYNSEMI SynSemi，Inc.	SYNSEMI
1N5711	文件：56.73 Kbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODES FEATURES •Forgeneralpurposeapplications •Metal-on-siliconjunctionSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfastswitching makeitidealforprotectionofMOSdevices,steering,biasingand couplingdiodesforfast	JINANJINGHENGJinan Jingheng (Group) Co.,Ltd 晶恒集团济南晶恒电子有限责任公司	JINANJINGHENG
1N5711	文件：36.05 Kbytes Page：2 Pages	SCHOTTKYBARRIERDIODES VRRM:70V,60V FEATURES: •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiode	EIC EIC	EIC
1N5711	文件：67.45 Kbytes Page：3 Pages	SCHOTTKYBARRIERDIODES DESCRIPTION ThisSchottkybarrierdiodeismetallurgicallybondedandoffersmilitarygradequalificationsforhigh-reliabilityapplicationson“1N”prefixednumbers.ThissmalldiodeishermeticallysealedandbondedintoaDO-35glasspackage. FEATURES •JEDECregistered1N5711-1,1N5712-1,1	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N5711	文件：124.62 Kbytes Page：1 Pages	SchottkyBarrierDiodesforGeneralPurposeApplications Description/Applications The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcostglasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logor	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
1N5711	文件：128.49 Kbytes Page：4 Pages	400mWattSmallSignalSchottkyDiode60to70Volts Features •MoistureSensitivity:Level1perJ-STD-020C •HighReverseBreakdownVoltage •LowForwardVoltageDrop •ForGeneralPurposeApplication •Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation	MCCMicro Commercial Components 美微科美微科半导体公司	MCC
1N5711	文件：55.97 Kbytes Page：2 Pages	SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N5711	文件：273.845 Kbytes Page：2 Pages	SCHOTTKYBARRIERSWITCHINGDIODE	SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 PDF上传者：深圳市福田区吉富昌电子商行	SUNMATE

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产品属性

产品编号：
1N5711UBCC
制造商：
Microchip Technology
类别：
分立半导体产品 > 二极管 - 整流器 - 单
系列：
Military, MIL-PRF-19500/444
包装：
散装
二极管类型：
肖特基
电流 - 平均整流 (Io)：
33mA
速度：
小信号 =< 200mA（Io），任意速度
不同 Vr、F 时电容：
2pF @ 0V，1MHz
安装类型：
表面贴装型
封装/外壳：
3-SMD，无引线
供应商器件封装：
UB
工作温度 - 结：
-65°C ~ 150°C
描述：
SCHOTTKY DIODE

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市艾宇欣科技有限公司	1N5711UBCC	Microsemi	1942+	N/A	908	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市科雨电子有限公司	1N5711UBCC	MICROSEMI	1809+	SMD	96	就找我吧!--邀您体验愉快问购元件!	询价
深圳市创新迹电子有限公司	1N5711UBCC	MICROCHIP	23+		7300	专注配单,只做原装进口现货	询价
深圳市宏捷佳电子科技有限公司	1N5711UBCC	Microchip Technology	24+	UB	9350	独立分销商,公司只做原装,诚心经营,免费试样正品保证	询价
深圳市安富世纪电子有限公司	1N5711UBCC	MICROCHIP	23+		7300	专注配单,只做原装进口现货	询价
深圳市高捷芯城科技有限公司	1N5711UBD	MICROCHIP(美国微芯)	23+		7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市百视威讯电子科技有限公司	1N5711UR-1		23+	N/A	64610	正品授权货源可靠	询价
深圳市永贝尔科技有限公司	1N5711UR-1	CDI-DIODE	23+	原厂原包	19960	只做进口原装终端工厂免费送样	询价
深圳市航润创能电子集团有限公司	1N5711UR-1	CDI	21+	SMD	1786	原装现货假一赔十	询价
深圳市汇莱威科技有限公司	1N5711UR-1	CDI		SMD	265209	假一罚十原包原标签常备现货!	询价

更多1N5711UBCC供应商更新时间2024-5-16 10:18:00

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