丝印：1Ks；Package：SOT-23；NPN Silicon AF Transistors

• For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856...-BC860...(PNP) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

文件：216.64 Kbytes 页数：8 Pages

Infineon

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丝印：1Ks；Package：SOT-323；NPN Silicon AF Transistors

NPN Silicon AF Transistors ● For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage ● Low noise between 30 Hz and 15 kHz ● Complementary types: BC856W, BC857W, BC858W, BC859W, BC860W (PNP)

文件：229.84 Kbytes 页数：8 Pages

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丝印：1Ks；Package：SOT-143；NPN Silicon Double Transistor

NPN Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBEmatching • High current gain • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

文件：49.31 Kbytes 页数：5 Pages

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丝印：1KS；Package：SOT-5X3(DYA)；TPDxE05U06 1, 4, 6 Channel ESD Protection Device for Super-Speed (Up to 6 Gbps) Interface

1 Features • IEC 61000-4-2 level 4 ESD protection – ±12kV contact discharge – ±15kV air gap discharge • IEC 61000-4-4 EFT protection – 80A (5/50ns) • IEC 61000-4-5 surge protection – 2.5A (8/20μs) • IO capacitance 0.42pF to 0.5pF (typical) • DC breakdown voltage 6.5V (minimum) • Ultra lo

文件：2.70752 Mbytes 页数：39 Pages

TI

德州仪器

丝印：1KS；Package：SOT-5X3(DYA)；TPDxE05U06 1, 4, 6 Channel ESD Protection Device for Super-Speed (Up to 6 Gbps) Interface

1 Features • IEC 61000-4-2 level 4 ESD protection – ±12kV contact discharge – ±15kV air gap discharge • IEC 61000-4-4 EFT protection – 80A (5/50ns) • IEC 61000-4-5 surge protection – 2.5A (8/20μs) • IO capacitance 0.42pF to 0.5pF (typical) • DC breakdown voltage 6.5V (minimum) • Ultra lo

文件：2.70752 Mbytes 页数：39 Pages

TI

德州仪器

丝印：1Ks；Package：SOT-23；NPN Silicon AF Transistors

文件：183.85 Kbytes 页数：19 Pages

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丝印：1Ks；Package：SOT-323；NPN Silicon AF Transistors

文件：183.85 Kbytes 页数：19 Pages

Infineon

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丝印：1Ks；Package：SOT-143；NPN Silicon Double Transistor

文件：181.56 Kbytes 页数：7 Pages

Infineon

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丝印：1Ks；Package：SOT-143；NPN Silicon Double Transistor

文件：536.49 Kbytes 页数：7 Pages

Infineon

英飞凌

丝印：1KS；Package：SOT-5X3；TPDxE05U06 1, 4, 6 Channel ESD Protection Device for Super-Speed (Up to 6 Gbps) Interface

文件：3.0746 Mbytes 页数：36 Pages

TI

德州仪器