丝印：1D7；Package：VSSOP；5-V, Low-Leakage-Current, 4:1 Precision Multiplexer

文件：1.57435 Mbytes 页数：35 Pages

TI

德州仪器

丝印：1D7N10MC；Package：H-PSOF8L；MOSFET - Power, Single N-Channel, TOLL 100 V, 1.8 m, 272 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Lowers Switching Noise/EMI • These Devices are Pb−Free and are RoHS Compliant

文件：272.08 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D7N4；Package：DFN5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Battery Protection • Synchronous Recti

文件：139.57 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D7N08H；Package：H-PSOF8L；MOSFET - Power, Single N-Channel, TOLL 80 V, 1.7 m, 241.3 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • Lowers Switching Noise/EMI • These Devices are Pb−Free and are RoHS Compliant

文件：359.65 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：1D7N10MC；Package：H-PSOF8L；MOSFET - Power, Single N-Channel, TOLL 100 V, 1.8 m, 265 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • Lowers Switching Noise/EMI • These Devices are Pb−Free and are RoHS Compliant

文件：271.68 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D7N04C；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 1.7 m, 185 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

文件：363.26 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D7N06C；Package：LFPAK8；MOSFET - Power, Single N-Channel 60 V, 1.68 m, 224 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：258.779 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：1D7N04C；Package：LFPAK4；MOSFET - Power, Single N-Channel 40 V, 1.7 m, 190 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • LFPAK4 Package, Industry Standard • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：260.16 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D7L40Y；Package：SOT669；N-channel 40 V, 1.8 mΩ, 200 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

1. General description 200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 200 A

文件：307.27 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：1D7T；Package：SOT-23；TLV743P 300-mA, Low-Dropout Regulator

1 Features 1• Input Voltage Range: 1.4 V to 5.5 V • Stable Operation With 1-μF Ceramic Output Capacitor • Foldback Overcurrent Protection • Packages: – SOT-23 (5) – X2SON (4) • Very Low Dropout: 125 mV at 300 mA (3.3 VOUT) • Accuracy: 1% (Typical), 1.4% (Maximum) • Low IQ: 34 μA

文件：1.25938 Mbytes 页数：39 Pages

TI

德州仪器