丝印：1D1；Package：UQFN；5 V, (-)2.5 V, Low-Leakage-Current, 4:1, 2-Channel Precision Multiplexer

文件：1.36315 Mbytes 页数：39 Pages

TI1

德州仪器

丝印：1D1N4；Package：SO-8FL；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.05 m, 233 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Battery Protection • ORing

文件：131.95 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：1D1N2；Package：WDFN9；MOSFET - Power, Single N-Channel, Source Down, WDFN9 25 V, 0.85 m, 264 A

Features • Advanced Source−Down Package Technology (3.3x3.3mm) with Excellent Thermal Conduction • Ultra Low RDS(on) to Improve System Efficiency • Low QG and Capacitance to Minimize Driving and Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typ

文件：294.11 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D1N4W；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.05 m, 233 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • AECQ101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • B

文件：149.14 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D1N04C；Package：POWER88；MOSFET - Power, Single N-Channel 40 V, 1.1 m, 277 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • New Power 88 Package • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：321.47 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：1D16；Package：VSSOP；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

文件：3.01627 Mbytes 页数：51 Pages

TI1

德州仪器

丝印：1D16；Package：VSSOP；Low- and High-Side Voltage Output, Current-Sense Amplifiers

文件：1.37467 Mbytes 页数：40 Pages

TI1

德州仪器

丝印：1D16；Package：VSSOP；Low- and High-Side Voltage Output, Current-Sense Amplifiers

文件：1.37467 Mbytes 页数：40 Pages

TI1

德州仪器

丝印：1D16；Package：VSSOP；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

文件：3.01627 Mbytes 页数：51 Pages

TI1

德州仪器

丝印：1D15NG；Package：DFN5；MOSFET - Power, Single N-Channel, SO8-FL 30 V, 1.15 m, 245 A

文件：185.24 Kbytes 页数：7 Pages

ONSEMI

安森美半导体