KST42

Marking：1D；Package：SOT-23；High Voltage Transistor

HighVoltageTransistor

MM3Z2V7

Marking：1D；Silicon Planar Zener Diodes

FEATURES •Totalpowerdissipation:Max.200mW. •Widezenerreversevoltagerange2.0Vto75V. •Smallplasticpackagesuitableforsurfacemounteddesign. •Toleranceapproximately±5

MMBTA42

Marking：1D；Package：SOT-23；HighVoltageTransistors

HighVoltageTransistors ●Wedeclarethatthematerialofproduct compliancewithRoHSrequirements.

MMBTA42

Marking：1D；Package：SOT-23；Plastic-Encapsulate Transistors

Features: Highbreakdownvoltage; Applications: Itisusedforordinaryhigh-voltageamplificationandiscomplementarytoMMBTA92.

MMBTA42

Marking：1D；Package：SOT-23；NPN High Voltage Amplifier

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryPNPtypeavailable(MMBTA92). ●Idealformediumpoweramplificationandswitching. APPLICATIONS ●NPNHighvoltageamplifier.

MMBTA42

Marking：1D；Package：SOT-23；NPN Transistors

Features ●Forswitchingandamplifierapplications. ●Highvoltage

MMBTA42

Marking：1D；Package：SOT-23；NPN Silicon General Purpose Transistors

VOLTAGE300VoltsCURRENT0.5Ampers FEATURES •Highcurrentcapacityincompactpackage.IC=0.5A. •Epitaxialplanartype. •Pb-FreePackageisavailable.

MMBTA42

Marking：1D；Package：SOT-23；NPN Transistors

■Features ●Highbreakdownvoltage ●Lowcollector-emittersaturationvoltage ●ComplementarytoMMBTA92(PNP)

MMBTA42

Marking：1D；Package：SOT-23；NPN High Voltage Amplifier

FEATURES •Epitaxialplanardieconstruction. •ComplementaryPNPtypeavailable(MMBTA92). •Idealformediumpoweramplificationandswitching. APPLICATIONS •NPNHighvoltageamplifier.

MMBTA42

Marking：1D；Package：SOT-23；Plastic-Encap sulate Transistors

FEATURES Highbreakdownvoltage Lowcollector-emittersaturationvoltage ComplementarytoMMBTA92(PNP)