PMPB20EN

Marking：1B；Package：SOT1220；30 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessmediumpower DFN2020MD-6(SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits •TrenchMOSFETtechnology •Veryfastswitching •Smalland

PMST2222

Marking：1B；Package：SOT323；NPN switching transistors

FEATURES •Highcurrent(max.600mA) •Lowvoltage(max.40V). APPLICATIONS •High-speedswitchingandlinearamplification. DESCRIPTION NPNswitchingtransistorinaSOT323plasticpackage.PNPcomplement:PMST2907A.

S1BFL

Marking：1B；Package：SOD-123F；Surface Mount General Purpose Rectifiers

Features UltraThinProfile−MaximumHeightof1.08mm ULFlammability94V−0Classification MSL1 GreenMoldCompound NRVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapable TheseDevicesareP

SASS14HE

Marking：1B；Package：SOD-323HE；Surface Mount Schottky Barrier Rectifiers 1 A, 30 V - 60 V

Features •VeryLowProfile−TypicalHeightof0.68mm •LowPowerLoss,HighEfficiency •MoistureSensitivityLevel1perJ−STD−020 •ULFlammability94V−0Classification •RoHSCompliant/GreenMoldingCompound •NRVBPrefixforAutomotiveandOtherApplicationsRequiring UniqueSitea

SS14HE

Marking：1B；Package：SOD-323HE；Surface Mount Schottky Barrier Rectifiers 1 A, 30 V - 60 V

Features •VeryLowProfile−TypicalHeightof0.68mm •LowPowerLoss,HighEfficiency •MoistureSensitivityLevel1perJ−STD−020 •ULFlammability94V−0Classification •RoHSCompliant/GreenMoldingCompound •NRVBPrefixforAutomotiveandOtherApplicationsRequiring UniqueSitea

BC846B

Marking：1B；Package：SOT-23；Ideally suited for automatic insertion

BC846B

Marking：1B；Package：SOT-23；NPN general purpose Transistor

BC846B

Marking：1B；Package：SOT-23；NPN Silicon Epitaxial General Purpose Transistors

BC846B

Marking：1B；Package：SOT-23；NPN Transistors

BC846B

Marking：1B；Package：SOT-23；NPN Plastic-Encapsulate Transistors